Серия стабилитронов 1SMA200

Taiwan Semiconductor

Общие характеристики

 Раздел Стабилитроны
Корпус DO214AC
Напряжение стабилизации
Ток стабилизации (макс)
Импеданс (макс)

Документация на серию 1SMA200

1SMA4737 – 1SMA200Z Taiwan Semiconductor 1W, 7.5V - 200V Surface Mount Zener Diode FEATURES ● ● ● ● ● ● ● KEY PARAMETERS Ideal for automated placement Glass passivated chip junction Low inductance Typical IR less than 1μA above 11V Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free according to IEC 61249-2-21 APPLICATIONS PARAMETER VALUE UNIT VZ 7.5 - 200 V Test current IZT 1.2 - 34 mA PD 1 W TJ MAX 175 °C Package DO-214AC (SMA) Configuration Single die ● For general purpose regulation and protection applications MECHANICAL DATA ● ● ● ● ● ● Case: DO-214AC (SMA) Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 0.060g (approximately) DO-214AC (SMA) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL VALUE UNIT Power dissipation, RTHJA<76.8 K/W, TA = 25°C PD 1 W Power dissipation, RTHJA<76.8 K/W, TA = 60°C PD 1.25 W PZSM 60 W IFSM 30 A TJ -55 to +175 °C Storage temperature TSTG -55 to +175 Notes: 1. Non Repetitive Peak surge PD Test Condition: tp = 100μs sq. pulse, TA = 25°C prior to surge °C (1) Non repetitive peak power dissipation Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load Junction temperature 1 Version: P2102 PDF
Документация на 1SMA200Z 

Дата модификации: 10.03.2021

Размер: 486.7 Кб

8 стр.

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