Серия выпрямительных диодов ES1DF3

Taiwan Semiconductor

Общие характеристики

 Раздел Выпрямительные диоды
Схема включения диодов
Максимальное обратное напряжение диода
Прямой ток диода (средний)
Время обратного восстановления диодов
Рабочая температура

Документация на серию ES1DF3

ES1A thru ES1J Taiwan Semiconductor CREAT BY ART Surface Mount Super Fast Rectifiers FEATURES - Glass passivated junction chip - Ideal for automated placement - Super fast recovery time for high efficiency - Built-in strain rellef - Moisture sensitivity level: level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: DO-214AC (SMA) DO-214AC (SMA) Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - Green compound (halogen-free) Base P/N with prefix "H" on packing code - AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test with prefix "H" on packing code meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 0.06 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (TA=25℃ unless otherwise noted) PARAMETER SYMBOL ES ES ES ES ES ES ES ES 1A 1B 1C 1D 1F 1G 1H 1J UNIT Maximum repetitive peak reverse voltage VRRM 50 100 150 200 300 400 500 600 V Maximum RMS voltage VRMS 35 70 105 140 210 280 350 420 V Maximum DC blocking voltage VDC 50 100 150 200 300 400 500 600 V Maximum average forward rectified current IF(AV) 1 A Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 30 A Maximum instantaneous forward voltage (Note 1) @1A Maximum reverse current @ rated VR TJ=25 ℃ TJ=100℃ VF Trr Typical junction capacitance (Note 3) Cj Operating junction temperature range Storage temperature range 1.3 1.7 V 5 IR Maximum reverse recovery time (Note 2) Typical thermal resistance 0.95 μA 100 35 ns 18 16 pF RθJL RθJA 35 85 TJ - 55 to +150 O C TSTG - 55 to +150 O C O C/W Note 1: Pulse test with PW=300μs, 1% duty cycle Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A Note 3: Measured at 1 MHz and Applied VR=4.0 Volts Document Number: DS_D1405052 Version:J14 PDF
Документация на ES1BE3 

ES1A SERIES_J14.xls

Дата модификации: 27.05.2014

Размер: 371.8 Кб

4 стр.

    Товары серии ES1DF3

    Наименование i Упаковка
    ES1DF3G (TSC)