Серия защитных диодов SMBJ150A

Taiwan Semiconductor

Общие характеристики

 Раздел Защитные диоды
Рассеиваемая мощность
Пиковая рассеиваемая мощность
Рабочее напряжение
Напряжение ограничения (номинальное)
Максимальное импульсное напряжение
Максимальный импульсный ток
Тип супрессора по свойствам
Количество линий ограничения

Документация на серию SMBJ150A

SMBJ SERIES Taiwan Semiconductor 600W, 5V - 170V Surface Mount Transient Voltage Suppressor FEATURES ● ● ● ● ● ● ● ● ● KEY PARAMETERS Ideal for automated placement Glass passivated junction Excellent clamping capability Fast response time: Typically less than 1.0ps Typical IR less than 1μA above 10V Meets ISO 7637-2 (Pulse 1/2a/2b/3a/3b) Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT VWM 5 - 170 V VBR (uni - directional) 6.4 - 231 V VBR (bi - directional) 6.4 - 231 V PPK 600 W APPLICATIONS TJ MAX 150 Package DO-214AA (SMB) Configuration Single die ● Protect sensitive circuit from damage by high voltage transients ● Lighting, ESD transient voltage protection of IC, system ● Inductive switching load protection of IC, system ● Electrical Fast Transient Immunity protection of IC, system MECHANICAL DATA ● ● ● ● ● ● Case: DO-214AA (SMB) Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 0.090g (approximately) DO-214AA (SMB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER Non-repetitive peak impulse power dissipation with (1) 10/1000µs waveform Steady state power dissipation at TA = 25°C Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load for Uni-directional only SYMBOL VALUE UNIT PPK 600 W PD 3 W IFSM 100 A Forward Voltage @ IF = 50A for Uni-directional only VF 3.5 / 5.0 V Junction temperature TJ - 55 to +150 °C Storage temperature TSTG - 55 to +150 Notes: 1. Non-repetitive current pulse per Fig.3 and derated above TA = 25°C per Fig.2 2. VF = 3.5V on SMBJ5.0 - SMBJ90 devices and VF = 5.0V on SMBJ100 - SMBJ170 devices °C (2) Devices for Bipolar Applications 1. For bidirectional use C or CA suffix for types SMBJ5.0 - types SMBJ170 2. Electrical characteristics apply in both directions 1 Version: R2104 PDF
Документация на SMBJ100A 

Дата модификации: 09.04.2021

Размер: 456.1 Кб

8 стр.

    Товары серии SMBJ150A

    Наименование i Упаковка Корпус Uогр(диапазон) Iраб
    SMBJ150A (TSC)
     

    SMBJ150A/TR7 (YAG)
    SMBJ150A (ONS-FAIR)     		Защитный диод - [DO-214AA]; Pрасс: 5 Вт; Pрасс(пик): 600 Вт; Uраб: 150 В; Uогр(ном): 17... 3000 шт DO214AA
    SMBJ150A M4 (TSC)
     
    		DO-214AA DO-214AA (SMB)
    SMBJ150A M4G (TSC)
     
    		DO-214AA DO-214AA (SMB)
    SMBJ150A R4 (TSC)
     
    		DO-214AA DO-214AA (SMB)
    SMBJ150A R4G (TSC)
     
    		DO-214AA DO-214AA (SMB)
    SMBJ150A R5 (TSC)
     
    		DO-214AA DO-214AA (SMB)
    SMBJ150A R5G (TSC)
     
    		DO-214AA DO-214AA (SMB)
    SMBJ150AHM4 (TSC)
     
    		—
    SMBJ150AHM4G (TSC)
     
    		—
    SMBJ150AHR4 (TSC)
     
    		—
    SMBJ150AHR4G (TSC)
     
    		—
    SMBJ150AHR5 (TSC)
     
    		—
    SMBJ150AHR5G (TSC)
     
    		—