Серия защитных диодов SMBJ160

Taiwan Semiconductor

Общие характеристики

 Раздел Защитные диоды
Корпус DO214AA
Рассеиваемая мощность
Пиковая рассеиваемая мощность
Рабочее напряжение
Напряжение ограничения (номинальное)
Напряжение ограничения (диапазон)
Максимальное импульсное напряжение
Ток утечки при рабочем напряжении
Максимальный импульсный ток
Количество линий ограничения

Документация на серию SMBJ160

SMBJ SERIES Taiwan Semiconductor 600W, 5V - 170V Surface Mount Transient Voltage Suppressor FEATURES ● ● ● ● ● ● ● ● ● KEY PARAMETERS Ideal for automated placement Glass passivated junction Excellent clamping capability Fast response time: Typically less than 1.0ps Typical IR less than 1μA above 10V Meets ISO 7637-2 (Pulse 1/2a/2b/3a/3b) Moisture sensitivity level: level 1, per J-STD-020 RoHS Compliant Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT VWM 5 - 170 V VBR (uni - directional) 6.4 - 231 V VBR (bi - directional) 6.4 - 231 V PPK 600 W APPLICATIONS TJ MAX 150 Package DO-214AA (SMB) Configuration Single die ● Protect sensitive circuit from damage by high voltage transients ● Lighting, ESD transient voltage protection of IC, system ● Inductive switching load protection of IC, system ● Electrical Fast Transient Immunity protection of IC, system MECHANICAL DATA ● ● ● ● ● ● Case: DO-214AA (SMB) Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 0.090g (approximately) DO-214AA (SMB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER Non-repetitive peak impulse power dissipation with (1) 10/1000µs waveform Steady state power dissipation at TA = 25°C Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load for Uni-directional only SYMBOL VALUE UNIT PPK 600 W PD 3 W IFSM 100 A Forward Voltage @ IF = 50A for Uni-directional only VF 3.5 / 5.0 V Junction temperature TJ - 55 to +150 °C Storage temperature TSTG - 55 to +150 Notes: 1. Non-repetitive current pulse per Fig.3 and derated above TA = 25°C per Fig.2 2. VF = 3.5V on SMBJ5.0 - SMBJ90 devices and VF = 5.0V on SMBJ100 - SMBJ170 devices °C (2) Devices for Bipolar Applications 1. For bidirectional use C or CA suffix for types SMBJ5.0 - types SMBJ170 2. Electrical characteristics apply in both directions 1 Version: R2104 PDF
Документация на SMBJ100A 

Дата модификации: 09.04.2021

Размер: 456.1 Кб

8 стр.

SMBJ SERIES Surface Mount Transient Voltage Suppressor Voltage Range 5.0 to 170 Volts 600 Watts Peak Power SMB/DO-214AA Features           For surface mounted application Low profile package Built-in strain relief Glass passivated junction Excellent clamping capability Fast response time: Typically less than 1.0ps from 0 volt to BV min. Typical IR less than 1μA above 10V High temperature soldering guaranteed: 260OC / 10 seconds at terminals Plastic material used carries Underwriters Laboratory Flammability Classification 94V-0 600 watts peak pulse power capability with a 10 x 1000 us waveform by 0.01% duty cycle .082(2.08) .076(1.93) .147(3.73) .137(3.48) .187(4.75) .167(4.25) .012(.31) .006(.15) .103(2.61) .078(1.99) .012(.31) .006(.15) Mechanical Data      .056(1.41) .035(0.90) Case: Molded plastic Terminals: Solder plated Polarity: Indicated by cathode bandexcept bipolar Standard packaging: 12mm tape (EIA STD RS-481) Weight: 0.093gram .008(.20) .004(.10) .208(5.28) .200(5.08) Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25℃ambient temperature unless otherwise specified. Type Number Symbol Value Units PPK Minimum 600 Watts Pd 3 Watts IFSM 100 Amps VF 3.5 / 5.0 Volts RθJL RθJA TJ, TSTG 10 55 -65 to + 150 ℃/W O Peak Power Dissipation at TA=25 C, Tp=1ms(Note 1) Steady State Power Dissipation Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method) (Note 2, 3) - Unidirectional Only Maximum Instantaneous Forward Voltage at 50.0A for Unidirectional Only (Note 4) Typical Thermal Resistance (Note 5) Operating and Storage Temperature Range O O C Notes: 1. Non-repetitive Current Pulse Per Fig. 3 and Derated above TA=25 C Per Fig. 2. 2. Mounted on 0.4 x 0.4" (10 x 10mm) Copper Pads to Each Terminal. 3. 8.3ms Single Half Sine-wave or Equivalent Square Wave, Duty Cycle=4 pulses Per Minute Maximum. 4. VF=3.5V on SMBJ5.0 thru SMBJ90 Devices and VF=5.0V on SMBJ100 thru SMBJ170 Devices. 5. Measured on P.C.B. with 0.27” x 0.27” (7.0mm x 7.0mm) Copper Pad Areas. Devices for Bipolar Applications 1. For Bidrectional Use C or CA Suffix for Types SMBJ5.0 through Types SMBJ170. 2. Electrical Characteristics Apply in Both Directions. - 602 - PDF
Документация на SMBJ160A 

DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM DATASHEET SEARCH, DATABOOK, COMPONENT, FREE DOWNLOAD SITE

Дата модификации: 08.10.2007

Размер: 99.2 Кб

4 стр.

    Товары серии SMBJ160

    Наименование i Упаковка Тип
    SMBJ160A (TSC)
     

    SMBJ160A (ONS-FAIR)     		Защитный диод - 3000 шт
    SMBJ160CA (TSC)
     

    SMBJ160CA (ONS-FAIR)     		3000 шт