Серия выпрямительных диодов US1DR3

Taiwan Semiconductor

Общие характеристики

	Раздел	Выпрямительные диоды
	Схема включения диодов
	Максимальное обратное напряжение диода
	Прямой ток диода (средний)
	Время обратного восстановления диодов
	Рабочая температура

Документация на серию US1DR3

US1A thru US1M Taiwan Semiconductor CREAT BY ART FEATURES High Efficient Surface Mount Rectifiers - Glass passivated chip junction - Ideal for automated placement - Low forward voltage drop - Ultrafast recovery time for high efficiency - Built-in strain relief - Moisture sensitivity level: level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: DO-214AC (SMA) Molding compound, UL flammability classification rating 94V-0 DO-214AC (SMA) Base P/N with suffix "G" on packing code - Green compound (halogen-free) Base P/N with prefix "H" on packing code - AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test with prefix "H" on packing code meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 0.06 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER SYMBOL US US US US US US US 1A 1B 1D 1G 1J 1K 1M UNIT Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V Maximum average forward rectified current IF(AV) 1 A Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 30 A Maximum instantaneous forward voltage (Note 1) @1A Maximum reverse current @ rated VR TJ=25 ℃ TJ=125 ℃ VF 1.0 V 1.7 5 IR μA 150 Maximum reverse recovery time (Note 2) Trr 50 75 ns Typical junction capacitance (Note 3) Cj 15 10 pF Typical thermal resistance Operating junction temperature range Storage temperature range RθjL RθjA 27 75 TJ - 55 to +150 O C TSTG - 55 to +150 O C O C/W Note 1: Pulse test with PW=300μs, 1% duty cycle Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. Document Number: DS_D1405051 Version: J14

Документация на US1AM2G

US1A SERIES_J14.xls

Дата модификации: 27.05.2014

Размер: 221.8 Кб

4 стр.

найти US1DR3.pdf

Товары серии US1DR3

Наименование	i	Упаковка
US1DR3G (TSC)