Серия FET транзисторов SUD50N04

Общие характеристики

Раздел FET транзисторы
Корпус TO252
Конфигурация и полярность
Максимальное напряжение сток-исток
Ток стока номинальный при 25°C, без учета ограничений корпуса
Сопротивление открытого канала (мин)
Сопротивление открытого канала при диапазоне Uзатв(ном)
Диапазон номинальных напряжений затвора
Максимальное напряжение затвора
Заряд затвора
Рассеиваемая мощность
Ёмкость затвора

Документация на серию SUD50N04

SUD50N04-8m8P Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0088 at VGS = 10 V 50 0.0105 at VGS = 4.5 V 50 VDS (V) 40 Qg (Typ.) 16 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % UIS Tested • 100 % Rg Tested • PWM Optimized • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • LCD Display Backlight Inverters • DC/DC Converters TO-252 D G Drain Connected to Tab G D S Top View S Ordering Information: SUD50N04-8m8P-4GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol VDS VGS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C ID TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD Continuous Source-Drain Diode Current 40 ± 20 V 14b 11.2b 100 40 A 2.6b 30 45 48.1 30.8 mJ W 3.1b 2.0b - 55 to 150 TJ, Tstg Operating Junction and Storage Temperature Range Unit 50a 44 IDM Pulsed Drain Current Limit °C THERMAL RESISTANCE RATINGS Parameter Maximum Steady State Symbol RthJA Typical Maximum Junction-to-Ambientb 32 40 Maximum Junction-to-Case Steady State RthJC 2.1 2.6 Unit °C/W Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. Document Number: 68647 S10-0109-Rev. B, 18-Jan-10 www.vishay.com 1 PDF
Документация на SUD50N04-8M8P-4GE3 

Дата модификации: 13.05.2017

Размер: 166.4 Кб

9 стр.

SUD50N04-8m8P Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0088 at VGS = 10 V 50 0.0105 at VGS = 4.5 V 50 VDS (V) 40 Qg (Typ.) 16 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % UIS Tested • 100 % Rg Tested • PWM Optimized • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • LCD Display Backlight Inverters • DC/DC Converters TO-252 D G Drain Connected to Tab G D S Top View S Ordering Information: SUD50N04-8m8P-4GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol VDS VGS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C ID TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD Continuous Source-Drain Diode Current 40 ± 20 V 14b 11.2b 100 40 A 2.6b 30 45 48.1 30.8 mJ W 3.1b 2.0b - 55 to 150 TJ, Tstg Operating Junction and Storage Temperature Range Unit 50a 44 IDM Pulsed Drain Current Limit °C THERMAL RESISTANCE RATINGS Parameter Maximum Steady State Symbol RthJA Typical Maximum Junction-to-Ambientb 32 40 Maximum Junction-to-Case Steady State RthJC 2.1 2.6 Unit °C/W Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. Document Number: 68647 S10-0109-Rev. B, 18-Jan-10 www.vishay.com 1 PDF
Документация на SUD50N04-8m8P-4GE3 

Дата модификации: 02.01.1970

Размер: 182.9 Кб

10 стр.

    Товары серии SUD50N04

    Наименование i Упаковка
    SUD50N04-8m8P-4GE3 (VISHAY) MOSFET N-CH 40V 14A TO-252 1 шт