BPD-BQBA31N G

Bright-Led
PHOTODIODE
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Внешний вид BPD-BQBA31N G

Технические характеристики

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Размер 3 мм
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BRIGHT LED ELECTRONICS CORP. BPD-BQBA31N SINCE 1981 END- LOOK PACKAGE PIN PHOTO DIODE ●Package Dimensions: z Features 1. Wide receiving angle 2.97(.117) 2. Linear response vs. irradiance 3. Fast switching time 4.10(.162) 4. End-looking Package ideal for space Anode limited applications Cathode 1.5(.059) MAX. 5. Lens Appearance: Black 25.4(1.00) MIN. 6. This product doesn't contain restriction Cathode substance, comply ROHS standard 0.5(.02) SQ. TYP. z Description The BPD-BQBA31Ndevice consists 2.54(.100) of a PIN silicon photodiode molded in NOM. 3.00(.118) 1.00(.039) MIN. a black epoxy package which allows spectral response infrared light wavelengths. The wide NOTES: 1.All dimensions are in millimeters (inches). receiving angle provides relatively even 2.Tolerance is ±0.25mm (0.01’) unless otherwise specified. reception over a large area. The 4. Specifications are subject to change without notice 3.Lead spacing is measured where the leads emerge from the package side-looking package is designed for easy PC board mounting. This photodiode is mechanically and spectrally matched to BRIGHT’s GaAs and GaAlAs series of infrared emitting diodes. z Absolute Maximum Ratings(Ta=25℃) Parameter Power Dissipation Reverse Breakdown Voltage Maximum Rating Unit 100 mW 60V Operating Temperature -45℃~+85℃ Storage Temperature Range -45℃~+100℃ Lead Soldering Temperature 260℃ for 5 seconds Rev.1.1 Page:1 of 3 PDF
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Microsoft Word - BPD-BQBA31N.doc

Дата модификации: 19.11.2004

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