ID2006SEC-R1

Chipown
Chipown ID2006 High-Side & Low-Side Gate Drive IC General description Features The ID2006 is a high voltage, high speed power MOSFET driver with independent high and low side referenced output channels based on P_SUB P_EPI process. The floating channel can be used to drive an N-channel power MOSFET in the high side configuration which operates up to 200 V. Logic inputs are compatible wi...
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Технические характеристики

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Корпус SO-8 SOIC8
Кол-во нижних каналов
Кол-во верхних каналов
Максимальное напряжение смещения
Максимальный выходной ток нарастания
Максимальный выходной ток спада
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Chipown ID2006 High-Side & Low-Side Gate Drive IC General description Features The ID2006 is a high voltage, high speed power MOSFET driver with independent high and low side referenced output channels based on P_SUB P_EPI process. The floating channel can be used to drive an N-channel power MOSFET in the high side configuration which operates up to 200 V. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction.       Fully operational to+200 V 3.3V and 5V input logic compatible dV/dt Immunity ±50 V/nsec Gate drive supply range from 6 V to 18 V Typically Source / Sink current capability 1 A/1 A Typically -9V negative Vs bias capability Package/Order Information Application      Small and medium- power motor driver Power MOSFETS driver Half−Bridge Power Converters Full-Bridge Power Converters Any Complementary Drive Converters 1 VCC VB 8 2 HIN HO 7 ID2006 3 LIN VS 6 4 COM LO 5 Order code Package ID2006SEC-R1 SOP8 Typical Circuit 1 RB VDC, up to 200V BSD CBS 1 VCC VB 8 2 HIN HO 7 2 3 15V Q1 Q3 Q5 ID2006 M 3 LIN VS 6 4 COM LO 5 Q2 Q4 Q6 5 4 MCU IF U IF V IF W Rcs U Rcs V Rcs W Note 1: RB value suggest 10 ohms, ultra fast recovery or schottky diode should be used as BSD Note 2: CBS value according to PWM control condition Note 3: Driver circuit should be adjust according to the MOSFETs be used Note 4: Pull down resistor between Gate and Source of MOSFETs, 10k ohms is suggested Note 5: Resistors between HIN/LIN and MCU, recommended value is 100 to 1k ohms www.chipown.com Wuxi Chipown Microelectronics Limited Rev.1.0 1/7 PDF
Документация на ID2006SEC-R1 

Chipown

Дата модификации: 15.09.2023

Размер: 600.2 Кб

7 стр.

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