APT2012PD1C

Kingbright
APT2012PD1C 2.0 x 1.25 mm Photodiode DESCRIPTION z PACKAGE DIMENSIONS Made with NPN silicon photodiode chips FEATURES z z z z z 2.0 mm x 1.25 mm SMD LED, 0.75 mm thickness Mechanically and spectrally matched to infrared emitting LED lamp Package: 2000 pcs / reel Moisture sensitivity level: 3 RoHS compliant APPLICATIONS z z z z Infrared applied systems Optoelectronic switches Photodetecto...
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APT2012PD1C 2.0 x 1.25 mm Photodiode DESCRIPTION z PACKAGE DIMENSIONS Made with NPN silicon photodiode chips FEATURES z z z z z 2.0 mm x 1.25 mm SMD LED, 0.75 mm thickness Mechanically and spectrally matched to infrared emitting LED lamp Package: 2000 pcs / reel Moisture sensitivity level: 3 RoHS compliant APPLICATIONS z z z z Infrared applied systems Optoelectronic switches Photodetector control circuits Sensor technology RECOMMENDED SOLDERING PATTERN (units : mm; tolerance : ± 0.1) Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.1(0.004") unless otherwise noted. 3. The specifications, characteristics and technical data described in the datasheet are subject to change without prior notice. 4. The device has a single mounting surface. The device must be mounted according to the specifications. ABSOLUTE MAXIMUM RATINGS at TA=25°C Parameter Maximum Ratings Units 150 mW Operating Temperature -40 to +85 °C Storage Temperature -40 to +85 °C Power Dissipation Note: 1. Relative humidity levels maintained between 40% and 60% in production area are recommended to avoid the build-up of static electricity – Ref JEDEC/JESD625-A and JEDEC/J-STD-033. © 2018 Kingbright. All Rights Reserved. Spec No: DSAA8348 / 1203001836 Rev No: V.6 Date: 08/09/2018 Page 1 / 3 PDF
Документация на APT2012PD1C 

APT2012PD1C(Ver.6)

Дата модификации: 09.08.2018

Размер: 204.9 Кб

3 стр.

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