WP3DPD1C

Kingbright
WP3DPD1C Photodiode DESCRIPTION z PACKAGE DIMENSIONS Made with PIN silicon phototransistor chips FEATURES z z Mechanically and spectrally matched to the infrared emitting LED lamp RoHS compliant APPLICATIONS z z z z Infrared applied systems Optoelectronic switches Photodetector control circuits Sensor technology Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.25...
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λmax
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WP3DPD1C Photodiode DESCRIPTION z PACKAGE DIMENSIONS Made with PIN silicon phototransistor chips FEATURES z z Mechanically and spectrally matched to the infrared emitting LED lamp RoHS compliant APPLICATIONS z z z z Infrared applied systems Optoelectronic switches Photodetector control circuits Sensor technology Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.25(0.01") unless otherwise noted. 3. Lead spacing is measured where the leads emerge from the package. 4. The specifications, characteristics and technical data described in the datasheet are subject to change without prior notice. ABSOLUTE MAXIMUM RATINGS at TA=25°C Parameter Power Dissipation Operating Temperature Storage Temperature Max.Ratings Units 150 mW -40 to +85 °C -40 to +85 °C [1] 260°C For 3 Seconds Lead Solder Temperature [2] 260°C For 5 Seconds Lead Solder Temperature Notes: 1. 2mm below package base. 2. 5mm below package base. 3. Relative humidity levels maintained between 40% and 60% in production area are recommended to avoid the build-up of static electricity – Ref JEDEC/JESD625-A and JEDEC/J-STD-033. © 2018 Kingbright. All Rights Reserved. Spec No: DSAF7367 / 1101016981 Rev No: V.3 Date: 08/10/2018 Page 1 / 4 PDF
Документация на WP3DPD1C 

WP3DPD1C(Ver.3)

Дата модификации: 10.08.2018

Размер: 249.4 Кб

4 стр.

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    KP-3216F3C (KGB)