WP7113P3BT

Kingbright
WP7113P3BT Phototransistor DESCRIPTION z PACKAGE DIMENSIONS Made with NPN silicon phototransistor chips FEATURES z z z Mechanically and spectrally matched to the infrared emitting LED lamp Blue transparent lens RoHS compliant APPLICATIONS z z z z Infrared applied systems Optoelectronic switches Photodetector control circuits Sensor technology Notes: 1. All dimensions are in millimeters ...
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Технические характеристики

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λ максимальной чувствительности
Спектральная область чувствительности
Поле зрения
Максимальный ток коллектора
Примечания
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WP7113P3BT Phototransistor DESCRIPTION z PACKAGE DIMENSIONS Made with NPN silicon phototransistor chips FEATURES z z z Mechanically and spectrally matched to the infrared emitting LED lamp Blue transparent lens RoHS compliant APPLICATIONS z z z z Infrared applied systems Optoelectronic switches Photodetector control circuits Sensor technology Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.25(0.01") unless otherwise noted. 3. Lead spacing is measured where the leads emerge from the package. 4. The specifications, characteristics and technical data described in the datasheet are subject to change without prior notice. ABSOLUTE MAXIMUM RATINGS at TA=25°C Parameter Max.Ratings Units Collector-to-Emitter Voltage 30 V Emitter-to-Collector Voltage 5 V 100 mW Operating Temperature -40 to +85 °C Storage Temperature -40 to +85 °C 260 °C Power Dissipation at (or below) 25°C Free Air Temperature Lead Soldering Temperature(>5mm for 5sec) Note: 1. Relative humidity levels maintained between 40% and 60% in production area are recommended to avoid the build-up of static electricity – Ref JEDEC/JESD625-A and JEDEC/J-STD-033. © 2017 Kingbright. All Rights Reserved. Spec No: DSAF6773 / 1101005146 Rev No: V.8 Date: 12/27/2017 Page 1 / 4 PDF
Документация на WP7113P3BT 

WP7113P3BT(Ver.8)

Дата модификации: 27.12.2017

Размер: 251.7 Кб

4 стр.

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    KP-1608P1C (KGB)