EE-SF5

Omron
OPTO SWITCH, REFLECTIVE; Channels, No. of:1; Output Type:Transistor; Current, Input:20mA; Voltage, Output Max:30V; Case Style:Thru Hole; Temperature, Operating Range:-25°C to +80°C; Current, If AV:50mA; Depth, External:5.7mm; Distance, Reflective Sensing:5mm; Length / Height, External:17.7mm; Optocoupler Type:Opto Switch; Pins, No. of:4; Power Dissipation:100mW; Voltage, Output:30V; Width, External:13mm
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Фотография EE-SF5

Технические характеристики

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Режим работы
Тип выхода
Рабочее расстояние
Способ монтажа
Ток излучателя (ном)
Коммутируемое напряжение (макс)
Коммутируемый ток (макс)
Примечания SENSR OPTO TRANS 5MM REFL SOLDER
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Photomicrosensor (Reflective) EE-SF5(-B) Be sure to read Precautions on page 25. ■ Dimensions ■ Features Note: All units are in millimeters unless otherwise indicated. • Dust-tight construction. • With a visible-light intercepting filter which allows objects to be sensed without being greatly influenced by the light radiated from fluorescent lamps. • Mounted with M2 screws. • Model with soldering terminals (EE-SF5). • Model with PCB terminals (EE-SF5-B). Matted 1.9 dia. 2.2±0.2 dia. hole ■ Absolute Maximum Ratings (Ta = 25°C) Item Emitter Four, 1.5 Four, 0.5 2.54 2.54±0.2 Detector EE-SF5 EE-SF5-B Internal Circuit A C K Dimensions E Terminal No. A K C E Unless otherwise specified, the tolerances are as shown below. Name Anode Cathode Collector Emitter Ambient temperature 3 mm max. ±0.3 3 < mm ≤ 6 6 < mm ≤ 10 ±0.375 ±0.45 10 < mm ≤ 18 ±0.55 18 < mm ≤ 30 ±0.65 50 mA (see note 1) Pulse forward current IFP 1A (see note 2) Reverse voltage VR 4V Collector–Emitter voltage VCEO 30 V Emitter–Collector voltage VECO --- Collector current IC 20 mA Collector dissipation PC 100 mW (see note 1) Operating Topr –25°C to 80°C Storage Tstg –30°C to 80°C Tsol 260°C (see note 3) Soldering temperature Tolerance Rated value IF 7.6±1 Four, 0.25 7.62±0.3 Symbol Forward current Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C. 2. The pulse width is 10 μs maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. ■ Electrical and Optical Characteristics (Ta = 25°C) Item Emitter Detector Symbol Value Condition Forward voltage VF 1.2 V typ., 1.5 V max. IF = 30 mA Reverse current IR 0.01 μA typ., 10 μA max. VR = 4 V Peak emission wavelength λP 940 nm typ. IF = 20 mA Light current IL 200 μA min., 2,000 μA max. IF = 20 mA, VCE = 10 V White paper with a reflection ratio of 90%, d = 5 mm (see note) Dark current ID 2 nA typ., 200 nA max. VCE = 10 V, 0 lx Leakage current ILEAK 2 μA max. IF = 20 mA, VCE = 10 V with no reflection --- --- 850 nm typ. VCE = 10 V Collector–Emitter saturated volt- VCE (sat) age Peak spectral sensitivity wavelength λP Rising time tr 30 μs typ. VCC = 5 V, RL = 1 kΩ, IL = 1 mA Falling time tf 30 μs typ. VCC = 5 V, RL = 1 kΩ, IL = 1 mA Note: The letter “d” indicates the distance between the top surface of the sensor and the sensing object. 168 EE-SF5(-B) Photomicrosensor (Reflective) PDF
Документация на серию EE-SF5 

Micro Sensing Device Data Book

Дата модификации: 19.03.2010

Размер: 113.9 Кб

2 стр.

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