2SB0942AP

Panasonic Industrial Europe GmbH
This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SB0942 (2SB942), 2SB0942A (2SB942A) Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1267, 2SD1267A ■ Features 4.2±0.2 5.5±0.2 2.7±0.2 16.7±0.3 7.5±0.2 M Di ain sc te on na tin nc ue e/ d • High forward current transfer ratio hFE which has satisfactory linearity ...
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Технические характеристики

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Корпус TO-220-3 TO-220AB
Тип проводимости и конфигурация
Рассеиваемая мощность
Напряжение КЭ максимальное
Ток коллектора
Граничная рабочая частота
Коэффициент усиления по току
  Примечание: Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
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This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SB0942 (2SB942), 2SB0942A (2SB942A) Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1267, 2SD1267A ■ Features 4.2±0.2 5.5±0.2 2.7±0.2 16.7±0.3 7.5±0.2 M Di ain sc te on na tin nc ue e/ d • High forward current transfer ratio hFE which has satisfactory linearity • Large collector-emitter saturation voltage VCE(sat) • Full-pack package which can be installed to the heat sink with one screw 10.0±0.2 4.2±0.2 0.7±0.1 Unit: mm φ 3.1±0.1 2SB0942 VCBO Unit −60 V −80 2SB0942A Collector-emitter voltage 2SB0942 (Base open) 2SB0942A VCEO Emitter-base voltage (Collector open) VEBO −60 IC Peak collector current ICP Collector power PC Ta = 25°C 1.4±0.1 0.8±0.1 V −80 Collector current dissipation Rating 14.0±0.5 Collector-base voltage (Emitter open) Symbol Solder Dip (4.0) Parameter di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. ■ Absolute Maximum Ratings TC = 25°C −5 V −4 A −8 A 40 W 1.3±0.2 0.5+0.2 –0.1 2.54±0.3 5.08±0.5 1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F-A1 Package 1 2 3 2 Junction temperature Tj Storage temperature Tstg 150 °C −55 to +150 °C ■ Electrical Characteristics TC = 25°C ± 3°C Base-emitter voltage Collector-emitter cutoff current (E-B short) 2SB0942 2SB0942A VCEO ce /D isc on tin Collector-emitter voltage (Base open) Symbol ue Parameter 2SB0942 an en int Emitter-base cutoff current (Collector open) Ma Forward current transfer ratio Collector-emitter saturation voltage IC = −30 mA, IB = 0 Min Typ Max −60 Unit V −80 VBE VCE = −4 V, IC = −3 A −2 V ICES VCE = −60 V, VBE = 0 −400 µA VCE = −80 V, VBE = 0 −400 ICEO VCE = −30 V, IB = 0 −700 µA 2SB0942A Collector-emitter cutoff current (Base open) Conditions IEBO VEB = −5 V, IC = 0 hFE1 * VCE = −4 V, IC = −1 A 40 hFE2 VCE = −4 V, IC = −3 A 15 VCE(sat) IC = −4 A, IB = − 0.4 A −1 mA 250  −1.5 V Transition frequency fT VCE = −10 V, IC = − 0.1 A, f = 10 MHz 30 MHz Turn-on time ton IC = −4 A, IB1 = − 0.4 A, IB2 = 0.4 A 0.2 µs Storage time tstg VCC = −50 V Fall time tf 0.5 µs 0.2 µs Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank R Q P hFE1 40 to 90 70 to 150 120 to 250 Note) The part numbers in the parenthesis show conventional part number. Publication date: February 2003 SJD00022BED 1 PDF
Документация на 2SB0942AP 

2SB0942, 2SB0942A SJD00022BED

Дата модификации: 30.11.2011

Размер: 240.4 Кб

3 стр.

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