2SB1438

Panasonic Industrial Europe GmbH
This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SB1438 Silicon PNP epitaxial planar type For low-frequency power amplification Unit: mm 6.9±0.1 4.0 M Di ain sc te on na tin nc ue e/ d 0.7 • Low collector-emitter saturation voltage VCE(sat) • Large collector-emitter voltage (Base open) VCEO • Allowing supply with the radial taping 14.5±0.5 d p lan inc ea se ed...
развернуть ▼ свернуть ▲
 

Технические характеристики

показать свернуть
Корпус TO-262-3
Тип проводимости и конфигурация
Рассеиваемая мощность
Напряжение КЭ максимальное
Ток коллектора
Граничная рабочая частота
Коэффициент усиления по току
Примечание Small Signal Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon
Нашли ошибку? Выделите её курсором и нажмите CTRL + ENTER

Файлы 1

показать свернуть
This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SB1438 Silicon PNP epitaxial planar type For low-frequency power amplification Unit: mm 6.9±0.1 4.0 M Di ain sc te on na tin nc ue e/ d 0.7 • Low collector-emitter saturation voltage VCE(sat) • Large collector-emitter voltage (Base open) VCEO • Allowing supply with the radial taping 14.5±0.5 d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll :// ol d d te te ow ww lo is is na n i w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P ico L d d e e ro n. ab typ ty du pa ou e pe ct d na t l life so ate cy nic st cle .co inf sta .jp orm ge /e a n/ tio . n. (1.0) 0.65 max. ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −100 V Collector-emitter voltage (Base open) VCEO −100 V VEBO −5 V Collector current IC −2 A Peak collector current ICP −3 A Collector power dissipation * PC 1 W Emitter-base voltage (Collector open) (0.5) (1.0) (0.2) 4.5±0.1 ■ Features 2.5±0.1 (0.8) Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0.45+0.10 –0.05 2.5±0.5 1 1.05±0.05 0.45+0.10 –0.05 2.5±0.5 2 3 1: Emitter 2: Collector 3: Base MT-2-A1 Package cm2 Note) *: Print circuit board: Copper foil area of 1 or more, and the board thickness of 1.7 mm for the collector portion Parameter Symbol Collector-base voltage (Emitter open) ue ■ Electrical Characteristics Ta = 25°C ± 3°C tin VCBO Conditions Min IC = −10 µA, IE = 0 −100 Typ Max Unit V VCEO IC = −1 mA, IB = 0 −100 V Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0 −5 V ICBO VCB = −50 V, IE = 0 Di sc on Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) te na nc e/ Forward current transfer ratio hFE2 Collector-emitter saturation voltage *1 M ain Base-emitter saturation voltage hFE1 *2 *1 VCE = −2 V, IC = −1 A 60 − 0.1 µA 340  VCE(sat) IC = −1 A, IB = −50 mA − 0.17 − 0.30 VBE(sat) IC = −1 A, IB = −50 mA − 0.85 fT Collector output capacitance (Common base, input open circuited) 120 Cob VCB = −10 V, IE = 50 mA, f = 200 MHz 90 VCB = −10 V, IE = 0, f = 1 MHz 70 −1.20 V V MHz 90 pF Pl Transition frequency *1 VCE = −2 V, IC = −200 mA Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Rank P Q hFE1 120 to 240 170 to 340 Publication date: January 2003 SJC00084BED 1 PDF
Документация на 2SB1438 

2SB1438 SJC00084BED

Дата модификации: 29.11.2011

Размер: 234.7 Кб

3 стр.

    Внимание! Точность указанного на сайте описания товара не может быть гарантирована. Для получения более полной и точной информации о товаре смотрите техническое описание (Datasheet) на сайте производителя.

    MMBT5401 (YJ)