2SB621A

Panasonic Industrial Europe GmbH
This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SB0621 (2SB621), 2SB0621A (2SB621A) Silicon PNP epitaxial planar type For low-frequency driver amplification Complementary to 2SD0592 (2SD592), 2SD0592A (2SD592A) Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 ■ Features 0.7±0.2 M Di ain sc te on na tin nc ue e/ d • Low collector-emitter saturation voltage VCE(sat) • High tra...
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Технические характеристики

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Тип проводимости и конфигурация
Рассеиваемая мощность
Напряжение КЭ максимальное
Ток коллектора
Граничная рабочая частота
Коэффициент усиления по току
  Примечание: Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
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This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SB0621 (2SB621), 2SB0621A (2SB621A) Silicon PNP epitaxial planar type For low-frequency driver amplification Complementary to 2SD0592 (2SD592), 2SD0592A (2SD592A) Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 ■ Features 0.7±0.2 M Di ain sc te on na tin nc ue e/ d • Low collector-emitter saturation voltage VCE(sat) • High transition frequency fT 12.9±0.5 0.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Rating Unit VCBO −30 V −60 2SB0621A VCEO Emitter-base voltage (Collector open) VEBO Peak collector current Collector power dissipation Junction temperature Storage temperature 2.5+0.6 –0.2 −25 2.5+0.6 –0.2 V 1 −50 −5 2 3 2.3±0.2 Collector-emitter voltage 2SB0621 (Base open) 2SB0621A Collector current 0.45+0.15 –0.1 0.45+0.15 –0.1 ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo em u ic t la on te /e st -in in de for x. ma ht t m ion l . Collector-base voltage (Emitter open) Symbol 2SB0621 V IC −1 A ICP −1.5 A PC 750 mW Tj 150 °C Tstg −55 to +150 °C 1: Emitter 2: Collector 3: Base EIAJ: SC-43A TO-92-B1 Package ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol 2SB0621 Collector-base voltage (Emitter open) 2SB0621A Collector-emitter voltage (Base open) 2SB0621A 2SB0621 Conditions IC = −10 µA, IE = 0 VCBO Min Typ Max −30 Unit V −60 IC = −2 mA, IB = 0 VCEO −25 V −50 Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0 Collector-base cutoff current (Emitter open) ICBO VCB = −20 V, IE = 0 Forward current transfer ratio hFE1 * VCE = −10 V, IC = −500 mA 85 VCE = −5 V, IC = −1 A 50 hFE2 −5 V − 0.1 µA 340   VCE(sat) IC = −500 mA, IB = −50 mA − 0.2 − 0.4 V Base-emitter saturation voltage VBE(sat) IC = −500 mA, IB = −50 mA − 0.85 −1.2 V Pl Collector-emitter saturation voltage Transition frequency fT Collector output capacitance (Common base, input open circuited) Cob VCB = −10 V, IE = 50 mA, f = 200 MHz 200 VCB = −10 V, IE = 0, f = 1 MHz 20 MHz 30 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank Q R S hFE1 85 to 170 120 to 240 170 to 340 Note) The part numbers in the parenthesis show conventional part number. Publication date: February 2003 SJC00044CED 1 PDF
Документация на 2SB621A 

2SB0621, 2SB0621A SJC00044CED

Дата модификации: 27.09.2006

Размер: 159.7 Кб

4 стр.

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    BC807-25 (YJ)