2SC3611

Panasonic Industrial Europe GmbH
This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SC3611 Silicon NPN epitaxial planar type For video amplifier Unit: mm 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 16.0±1.0 d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll :// ol d d te te ow ww lo is is na n i w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P ico L d d e e ro n. ...
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Технические характеристики

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Корпус TO-220-3 TO-220AB
Тип проводимости и конфигурация
Рассеиваемая мощность
Напряжение КЭ максимальное
Ток коллектора
Граничная рабочая частота
Коэффициент усиления по току
  Примечание: Power Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
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This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SC3611 Silicon NPN epitaxial planar type For video amplifier Unit: mm 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 16.0±1.0 d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll :// ol d d te te ow ww lo is is na n i w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P ico L d d e e ro n. ab typ ty du pa ou e pe ct d na t l life so ate cy nic st cle .co inf sta .jp orm ge /e a n/ tio . n. 3.8±0.3 • High transition frequency fT • Small collector output capacitance (Common base, input open circuited) Cob • Wide current range • TO-126B package which requires no insulation plate for installation to the heat sink 3.05±0.1 ■ Features 11.0±0.5 M Di ain sc te on na tin nc ue e/ d φ 3.16±0.1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 110 V Collector-emitter voltage (Resistor between B and E) VCER 100 V Collector-emitter voltage (Base open) VCEO 50 V Emitter-base voltage (Collector open) VEBO 3.5 V Collector current IC 150 mA Peak collector current ICP 300 mA Collector power dissipation PC 1.2 W 4.0 0.75±0.1 0.5±0.1 4.6±0.2 1 2 0.5±0.1 1.76±0.1 2.3±0.2 3 1: Emitter 2: Collector 3: Base TO-126B-A1 Package * Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C tin ue Note) *: With a 100 × 100 × 2 mm Al heat sink Parameter Di sc on ■ Electrical Characteristics Ta = 25°C ± 3°C Symbol Conditions Min Typ Max Unit IC = 100 µA, IE = 0 110 V VCER IC = 500 µA, RBE = 470 Ω 100 V Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0 50 V Emitter-base voltage (Collector open) VEBO IE = 100 µA, IC = 0 3.5 Collector-emitter cutoff current (Base open) ICEO VCE = 35 V, IB = 0 hFE VCE = 5 V, IC = 100 mA VCE(sat) IC = 150 mA, IB = 15 mA nc te na M ain Forward current transfer ratio Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) Pl VCBO e/ Collector-base voltage (Emitter open) Collector-emitter voltage (Resistor between B and E) V 10 µA  20 0.5 fT1 VCB = 10 V, IE = −10 mA, f = 200 MHz 300 fT2 VCB = 10 V, IE = −110 mA, f = 200 MHz 350 Cob VCB = 30 V, IE = 0, f = 1 MHz 3 V MHz pF Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: January 2003 SJD00108BED 1 PDF
Документация на 2SC3611 

2SC3611 SJD00108BED

Дата модификации: 29.11.2011

Размер: 246.1 Кб

4 стр.

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    BC807-25 (YJ)