2SC3942

Panasonic Industrial Europe GmbH
This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SC3942 Silicon NPN triple diffusion planar type For color TV chroma output 4.2±0.2 5.5±0.2 Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 300 V Collector-emitter voltage (Base open) VCEO 300 V VEBO 7 V IC 0.1 A ICP 0.2 A PC 10 W Junction temperature Tj 150 °C Storage ...
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Технические характеристики

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Корпус TO-220-3 TO-220AB
Тип проводимости и конфигурация
Рассеиваемая мощность
Напряжение КЭ максимальное
Ток коллектора
Граничная рабочая частота
Коэффициент усиления по току
  Примечание: Power Bipolar Transistor, 0.1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
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This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SC3942 Silicon NPN triple diffusion planar type For color TV chroma output 4.2±0.2 5.5±0.2 Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 300 V Collector-emitter voltage (Base open) VCEO 300 V VEBO 7 V IC 0.1 A ICP 0.2 A PC 10 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Peak collector current TC = 25°C Collector power dissipation 16.7±0.3 14.0±0.5 Parameter Collector current φ 3.1±0.1 1.3±0.2 1.4±0.1 Solder Dip (4.0) ■ Absolute Maximum Ratings Ta = 25°C Emitter-base voltage (Collector open) 2.7±0.2 d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll :// ol d d te te ow ww lo is is na n i w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P ico L d d e e ro n. ab typ ty du pa ou e pe ct d na t l life so ate cy nic st cle .co inf sta .jp orm ge /e a n/ tio . n. • High collector-emitter voltage (Base open) VCEO • Small collector output capacitance (Common base, input open circuited) Cob • Full-pack package which can be installed to the heat sink with one screw 7.5±0.2 ■ Features 4.2±0.2 M Di ain sc te on na tin nc ue e/ d 0.7±0.1 Unit: mm 10.0±0.2 0.5+0.2 –0.1 0.8±0.1 2.54±0.3 5.08±0.5 1 2 3 1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F-A1 Package 2 ue ■ Electrical Characteristics Ta = 25°C ± 3°C Symbol Conditions Min Typ Max Unit VCBO IC = 10 µA, IE = 0 300 V Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0 300 V Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 7 Base-emitter voltage VBE VCE = 10 V, IC = 30 mA Collector-emitter cutoff current (Base open) ICEO VCE = 200 V, IB = 0 Forward current transfer ratio hFE VCE = 50 V, IC = 5 mA VCE(sat) IC = 30 mA, IB = 3 mA Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) fT Cob VCE = 30 V, IC = 20 mA, f = 10 MHz VCB = 30 V, IE = 0, f = 1 MHz Pl M ain te na nc e/ on Collector-base voltage (Emitter open) Di sc tin Parameter 50 V 1.2 V 10 µA 250  1.5 70 V 140 MHz 2.7 pF Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: February 2003 SJD00115CED 1 PDF
Документация на 2SC3942 

2SC3942 SJD00115CED

Дата модификации: 29.11.2011

Размер: 236.5 Кб

3 стр.

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