2SC5909

Panasonic Industrial Europe GmbH
This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SC5909 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 26.5±0.5 Collector-base voltage (Emitter open) VCBO 1 500 V Collector-emitter voltage (E-B short) VCES 1 500 V Collector-emitter voltage (Base open) VCEO 600 V Emitter-base voltage (Collector open) VEBO 7 V ...
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Технические характеристики

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Корпус TO-220-3 TO-220AB
Тип проводимости и конфигурация
Рассеиваемая мощность
Напряжение КЭ максимальное
Ток коллектора
Граничная рабочая частота
Коэффициент усиления по току
  Примечание: Power Bipolar Transistor, 15A I(C), 600V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
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Файлы 1

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This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SC5909 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 26.5±0.5 Collector-base voltage (Emitter open) VCBO 1 500 V Collector-emitter voltage (E-B short) VCES 1 500 V Collector-emitter voltage (Base open) VCEO 600 V Emitter-base voltage (Collector open) VEBO 7 V Peak collector current * ICP Collector power dissipation PC Ta = 25°C 5 A 15 A 25 A 50 W 5.45±0.3 10.9±0.5 Tj Storage temperature Tstg 1 2 3 1: Base 2: Collector 3: Emitter EIAJ: SC-94 TOP-3E-A1 Package C B 150 °C −55 to +150 °C E ce /D isc on tin ue Note) *: Non-repetitive peak collector current 5˚ Internal Connection 3 Junction temperature 0.7±0.1 5.5±0.3 Unit IB 5˚ 1.1±0.1 (2.0) Rating IC (1.2) (2.0) 18.6±0.5 (2.0) Solder Dip Symbol 3.3±0.3 Parameter Collector current 5˚ 5˚ (4.0) 2.0±0.2 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. ■ Absolute Maximum Ratings TC = 25°C Base current 3.0±0.3 5˚ (23.4) M Di ain sc te on na tin nc ue e/ d • High breakdown voltage: VCBO ≥ 1 500 V • High-speed switching: tf < 200 ns • Wide safe operation area (4.5) 5˚ (10.0) ■ Features φ 3.2±0.1 22.0±0.5 15.5±0.5 ■ Electrical Characteristics TC = 25°C ± 3°C Parameter en an Collector-base cutoff current (Emitter open) Symbol ICBO Conditions µA 1 mA VCE = 5 V, IC = 7.5 A Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat) int Unit 50 VEB = 7 V, IC = 0 Ma Max VCB = 1 500 V, IE = 0 hFE Forward current transfer ratio Typ VCB = 1 000 V, IE = 0 IEBO Emitter-base cutoff current (Collector open) Min 50 µA 10  IC = 7.5 A, IB = 1.88 A 2.5 V IC = 7.5 A, IB = 1.88 A 1.5 V 5 Transition frequency fT VCE = 10 V, IC = 0.1 A, f = 0.5 MHz Storage time tstg IC = 7.5 A, Resistance loaded 2.7 µs IB1 = 1.88 A, IB2 = −3.75 A 0.2 µs Fall time tf 3 MHz Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: March 2004 SJD00307AED 1 PDF
Документация на 2SC5909 

2SC5909 SJD00307AED

Дата модификации: 29.11.2011

Размер: 228.9 Кб

3 стр.

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    BC807-25 (YJ)