2SD1276

Panasonic Industrial Europe GmbH
Power Transistors 2SD1276, 2SD1276A Silicon NPN triple diffusion planar type darlington Unit: mm 10.0±0.2 0.7±0.1 For power amplification Complementary to 2SB0950 and 2SB0950A 16.7±0.3 4.2±0.2 φ 3.1±0.1 M Di ain sc te on na tin nc ue e/ d • High forward current transfer ratio hFE • High-speed switching • Full-pack package which can be installed to the heat sink with one screw 2.7±0.2 7...
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Технические характеристики

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Корпус TO-220-3 TO-220AB
Тип проводимости и конфигурация
Рассеиваемая мощность
Напряжение КЭ максимальное
Ток коллектора
Граничная рабочая частота
Коэффициент усиления по току
  Примечание: Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
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Power Transistors 2SD1276, 2SD1276A Silicon NPN triple diffusion planar type darlington Unit: mm 10.0±0.2 0.7±0.1 For power amplification Complementary to 2SB0950 and 2SB0950A 16.7±0.3 4.2±0.2 φ 3.1±0.1 M Di ain sc te on na tin nc ue e/ d • High forward current transfer ratio hFE • High-speed switching • Full-pack package which can be installed to the heat sink with one screw 2.7±0.2 7.5±0.2 ■ Features 4.2±0.2 5.5±0.2 2SD1276 VCBO 2SD1276A VCEO Emitter-base voltage (Collector open) VEBO ICP TC = 25°C Collector power dissipation 60 V PC 60 V 2.54±0.3 5.08±0.5 1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F-A1 Package 5 V 4 A 8 A 40 W 1 2 3 Internal Connection C 2.0 Junction temperature Tj Storage temperature Tstg 150 °C −55 to +150 °C B ■ Electrical Characteristics Ta = 25°C ± 3°C Symbol 2SD1276 Collector-base cutoff current (Emitter open) 2SD1276 en int Ma Forward current transfer ratio Unit V 80 V ICBO VCB = 60 V, IE = 0 200 µA VCB = 80 V, IE = 0 200 VCE = 30 V, IB = 0 500 VCE = 40 V, IB = 0 500 ICEO IEBO VEB = 5 V, IC = 0 hFE1 VCE = 3 V, IC = 0.5 A 1 000 VCE = 3 V, IC = 3 A 1 000 hFE2 Collector-emitter saturation voltage Max 2.5 2SD1276A Emitter-base cutoff current (Collector open) Typ 60 VCE = 3 V, IC = 3 A 2SD1276A 2SD1276 Min E VBE an Collector-emitter cutoff current (Base open) 2SD1276A ce /D isc on tin Base-emitter voltage Conditions IC = 30 mA, IB = 0 VCEO ue Parameter Collector-emitter voltage (Base open) 0.5+0.2 –0.1 0.8±0.1 80 IC Peak collector current Unit 80 Collector-emitter voltage 2SD1276 (Base open) 2SD1276A Collector current Rating Solder Dip (4.0) Collector-base voltage (Emitter open) Symbol 1.3±0.2 1.4±0.1 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. Parameter 14.0±0.5 ■ Absolute Maximum Ratings Ta = 25°C * VCE(sat)1 IC = 3 A, IB = 12 mA VCE(sat)2 IC = 5 A, IB = 20 mA 2 µA mA  10 000 2.0 V 4.0 fT VCE = 10 V, IC = 0.5 A, f = 1 MHz 20 MHz Turn-on time ton IC = 3 A, IB1 = 12 mA, IB2 = −12 mA, 0.5 µs Storage time tstg VCC = 50 V 4.0 µs 1.0 µs Transition frequency Fall time tf Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank R hFE2 1 000 to 2 500 Publication date: February 2003 Q P 2 000 to 5 000 4 000 to 10 000 SJD00190BED 1 PDF
Документация на 2SD1276 

2SD1276, 2SD1276A SJD00190BED

Дата модификации: 30.11.2011

Размер: 202.9 Кб

3 стр.

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    BC807-25 (YJ)