RS8802HXK

Runic
RS8802 Dual 5A High-Speed, Low-Side Gate Driver 1 FEATURES 3 DESCRIPTIONS  Industry-Standard Pinout The RS8802 dual-channel, high-speed, low-side gate  Two Independent Gate-Drive Channels driver device is capable of effectively driving MOSFET  5A Peak Source and Sink-Drive Current and IGBT power switches. Using a design that  TTL and CMOS Compatible Logic Threshold inherently mini...
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Технические характеристики

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Корпус SO-8 SOIC8
Кол-во нижних каналов
Кол-во верхних каналов
Максимальное напряжение смещения
Максимальный выходной ток нарастания
Максимальный выходной ток спада
Рабочая температура
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RS8802 Dual 5A High-Speed, Low-Side Gate Driver 1 FEATURES 3 DESCRIPTIONS  Industry-Standard Pinout The RS8802 dual-channel, high-speed, low-side gate  Two Independent Gate-Drive Channels driver device is capable of effectively driving MOSFET  5A Peak Source and Sink-Drive Current and IGBT power switches. Using a design that  TTL and CMOS Compatible Logic Threshold inherently minimizes shoot-through current, the Independent of Supply Voltage  Hysteretic-Logic Thresholds for High Noise Immunity  Inputs Pin-Voltage Levels Not Restricted by VDD Pin Bias Supply Voltage RS8802 is capable of sourcing and sinking high peakcurrent pulses into capacitive loads offering rail-to-rail drive capability and extremely small propagation delay typically 13ns. The RS8802 device is capable of handling -4V at input.  4.5V to 18V Single-Supply Range In addition, the drivers feature matched internal  Outputs Held Low During VDD-UVLO, (Ensures propagation delays between the two channels, these Glitch-Free Operation at Power up and Power delays are very well suited for applications requiring Down) dual-gate drives with critical timing, such as  Fast Propagation Delays (13ns Typical) synchronous rectifiers. This also enables connecting  Fast Rise and Fall Times (7ns and 6ns Typical) two channels in parallel to effectively increase current-  Two Outputs are in Parallel for Higher Drive drive capability or driving two switches in parallel with Current one input signal.  Outputs Held Low When Inputs Floating The RS8802 provides 5A source and 5A sink  Operating Temperature Range of –40°C to (symmetrical drive) peak-drive current capability at 140°C  Micro SIZE PACKAGES: SOIC-8(SOP8) VDD = 12V. The RS8802 is designed to operate over a wide VDD range of 4.5 V to 18 V and wide temperature range of 2 APPLICATIONS  Switched-Mode Power Supplies  DC-DC Converters  Motor Control, Solar Power  Gate Drive for Emerging Wide Band-Gap Power Devices such as GaN -40°C to 140°C. Internal Undervoltage Lockout (UVLO) circuitry on VDD pin holds output low outside VDD operating range. The capability to operate at low voltage levels such as below 5V, along with best-inclass switching characteristics, is especially suited for driving emerging wide band-gap power-switching devices as GaN power semiconductor devices. Device Information (1) PART NUMBER RS8802 (1) REV A.1 1 / 18 PACKAGE SOIC-8(SOP8) BODY SIZE (NOM) 4.90mm×3.90mm For all available packages, see the orderable addendum at the end of the data sheet. www.run-ic.com PDF
Документация на RS8802HXK 

Дата модификации: 30.12.2024

Размер: 543.4 Кб

18 стр.

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