Серия оптических датчиков положения EE-SV3

Omron

Общие характеристики

Раздел Датчики положения оптические
Режим работы
Тип выхода
Рабочее расстояние
Способ монтажа
Ток излучателя (ном)
Коммутируемое напряжение (макс)
Коммутируемый ток (макс)

Документация на серию EE-SV3

Photomicrosensor (Transmissive) EE-SV3 Series Be sure to read Precautions on page 25. ■ Dimensions ■ Features Note: All units are in millimeters unless otherwise indicated. • High-resolution model with a 0.2-mm-wide or 0.5-mm-wide sensing aperture, high-sensitivity model with a 1-mm-wide sensing aperture, and model with a horizontal sensing aperture are available. • Solder terminal models: EE-SV3/-SV3-CS/-SV3-DS/-SV3-GS • PCB terminal models EE-SV3-B/-SV3-C/-SV3-D/-SV3-G Center mark ■ Absolute Maximum Ratings (Ta = 25°C) Four, R1 Four, 0.25 Four, R1 Two, 3.2±0.2 dia. holes Four, 1.5 2.54±0.2 Detector 2.54±0.2 Cross section AA Model K Four, 0.5 Two, 3.2±0.2 dia. holes Cross section AA EE-SV3(-B) EE-SV3-C(S) EE-SV3-D(S) EE-SV3-G(S) Internal Circuit Emitter Aperture (a x b) 2.1 x 0.5 2.1 x 1.0 2.1 x 0.2 0.5 x 2.1 Terminal No. Name A Anode K C E Cathode Collector Emitter Dimensions Tolerance 3 mm max. ±0.2 3 < mm ≤ 6 ±0.24 6 < mm ≤ 10 ±0.29 10 < mm ≤ 18 ±0.35 18 < mm ≤ 30 ±0.42 IF 50 mA (see note 1) Pulse forward current IFP 1A (see note 2) Reverse voltage VR 4V Collector–Emitter voltage VCEO 30 V Emitter–Collector voltage VECO --- Collector current IC 20 mA Collector dissipa- PC tion 100 mW (see note 1) Topr –25°C to 85°C Storage Tstg –30°C to 100°C Soldering temperature Tsol 260°C (see note 3) Unless otherwise specified, the tolerances are as shown below. E Symbol Rated value Forward current Ambient tem- Operating perature C A Item Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C. 2. The pulse width is 10 μs maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value EE-SV3(-B) Emitter Detector EE-SV3-D(S) Condition EE-SV3-G(S) Forward voltage VF 1.2 V typ., 1.5 V max. IF = 30 mA Reverse current IR 0.01 μA typ., 10 μA max. VR = 4 V Peak emission wavelength λP 940 nm typ. IF = 20 mA Light current IL 0.5 to 14 mA Dark current ID 2 nA typ., 200 nA max. VCE = 10 V, 0 lx Leakage current ILEAK --- --- Collector–Emitter saturated voltage VCE (sat) 0.1 V typ., 0.4 V max. Peak spectral sensitivity λP wavelength 1 to 28 mA 0.1 mA min. --- 0.5 to 14 mA 0.1 V typ., 0.4 V max. IF = 20 mA, VCE = 10 V IF = 20 mA, IL = 0.1 mA 850 nm typ. VCE = 10 V VCC = 5 V, RL = 100 Ω, IL = 5 mA Rising time tr 4 μs typ. Falling time tf 4 μs typ. 114 EE-SV3-C(S) EE-SV3 Series Photomicrosensor (Transmissive) PDF
Документация на серию EE-SV3 

Micro Sensing Device Data Book

Дата модификации: 15.06.2009

Размер: 111.6 Кб

2 стр.

    Товары серии EE-SV3

    Наименование i Упаковка
    EE-SV3 (OMRON)
     
    Датчик положения оптический - Режим: просвет; Выход: фототранзистор; Расстояние: 3.4 мм... 100 шт
    EE-SV3-B (OMRON)
     
    Датчик положения оптический - Режим: просвет; Выход: фототранзистор; Расстояние: 3.4 мм... 100 шт