EE-SV3

Omron
OPTO SWITCH, SLOTTED; Channels, No. of:1; Output Type:Transistor; Current, Input:20mA; Voltage, Output Max:30V; Case Style:Slotted Switch; Temperature, Operating Range:-25°C to +85°C; Centres, Fixing:12.7mm; Current, If AV:50mA; Depth, External:6.2mm; Length / Height, External:18.2mm; Optocoupler Type:Opto Switch; Pins, No. of:4; Pitch, Row:7.6mm; Time, Fall:4чs; Time, Rise:4чs; Voltage, Vce Sat Max:0.4V; Width, External:15.1mm; Width, Gap:3.4mm
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Фотография EE-SV3

Технические характеристики

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Режим работы
Тип выхода
Рабочее расстояние
Способ монтажа
Ток излучателя (ном)
Коммутируемое напряжение (макс)
Коммутируемый ток (макс)
Примечания SENSR OPTO SLOT 3.4MM TRANS THRU
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Photomicrosensor (Transmissive) EE-SV3 Series Be sure to read Precautions on page 25. ■ Dimensions ■ Features Note: All units are in millimeters unless otherwise indicated. • High-resolution model with a 0.2-mm-wide or 0.5-mm-wide sensing aperture, high-sensitivity model with a 1-mm-wide sensing aperture, and model with a horizontal sensing aperture are available. • Solder terminal models: EE-SV3/-SV3-CS/-SV3-DS/-SV3-GS • PCB terminal models EE-SV3-B/-SV3-C/-SV3-D/-SV3-G Center mark ■ Absolute Maximum Ratings (Ta = 25°C) Four, R1 Four, 0.25 Four, R1 Two, 3.2±0.2 dia. holes Four, 1.5 2.54±0.2 Detector 2.54±0.2 Cross section AA Model K Four, 0.5 Two, 3.2±0.2 dia. holes Cross section AA EE-SV3(-B) EE-SV3-C(S) EE-SV3-D(S) EE-SV3-G(S) Internal Circuit Emitter Aperture (a x b) 2.1 x 0.5 2.1 x 1.0 2.1 x 0.2 0.5 x 2.1 Terminal No. Name A Anode K C E Cathode Collector Emitter Dimensions Tolerance 3 mm max. ±0.2 3 < mm ≤ 6 ±0.24 6 < mm ≤ 10 ±0.29 10 < mm ≤ 18 ±0.35 18 < mm ≤ 30 ±0.42 IF 50 mA (see note 1) Pulse forward current IFP 1A (see note 2) Reverse voltage VR 4V Collector–Emitter voltage VCEO 30 V Emitter–Collector voltage VECO --- Collector current IC 20 mA Collector dissipa- PC tion 100 mW (see note 1) Topr –25°C to 85°C Storage Tstg –30°C to 100°C Soldering temperature Tsol 260°C (see note 3) Unless otherwise specified, the tolerances are as shown below. E Symbol Rated value Forward current Ambient tem- Operating perature C A Item Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C. 2. The pulse width is 10 μs maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. ■ Electrical and Optical Characteristics (Ta = 25°C) Item Symbol Value EE-SV3(-B) Emitter Detector EE-SV3-D(S) Condition EE-SV3-G(S) Forward voltage VF 1.2 V typ., 1.5 V max. IF = 30 mA Reverse current IR 0.01 μA typ., 10 μA max. VR = 4 V Peak emission wavelength λP 940 nm typ. IF = 20 mA Light current IL 0.5 to 14 mA Dark current ID 2 nA typ., 200 nA max. VCE = 10 V, 0 lx Leakage current ILEAK --- --- Collector–Emitter saturated voltage VCE (sat) 0.1 V typ., 0.4 V max. Peak spectral sensitivity λP wavelength 1 to 28 mA 0.1 mA min. --- 0.5 to 14 mA 0.1 V typ., 0.4 V max. IF = 20 mA, VCE = 10 V IF = 20 mA, IL = 0.1 mA 850 nm typ. VCE = 10 V VCC = 5 V, RL = 100 Ω, IL = 5 mA Rising time tr 4 μs typ. Falling time tf 4 μs typ. 114 EE-SV3-C(S) EE-SV3 Series Photomicrosensor (Transmissive) PDF
Документация на серию EE-SV3 

Micro Sensing Device Data Book

Дата модификации: 15.06.2009

Размер: 111.6 Кб

2 стр.

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