US3M-C

Anbon
US3A-C THRU US3M-C 3.0 A Surface Mount High Effciency Rectifiers-50-1000V Package outline Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Ultra fast switching for high efficiency Low reverse leakage Built-in strain relief,ideal for automated placement High forward surge current capability High temperature soldering...
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  • Корпус: DO214AB

Аналоги 5

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Тип Наименование Корпус Упаковка i Карточка
товара
P= HS3M (YJ)
 
DO214AB в ленте 3000 шт
 
P= US3M SMCG (JSCJ)
 
DO214AB в ленте 3000 шт
 
P= HFMC308 (LRC)
 
DO-214AB SMC в ленте 3000 шт
 
P= US3MCG (SHIKUES)
 
DO214AB
 
P= US3M (JSCJ)
 
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US3A-C THRU US3M-C 3.0 A Surface Mount High Effciency Rectifiers-50-1000V Package outline Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 For surface mounted applications Ultra fast switching for high efficiency Low reverse leakage Built-in strain relief,ideal for automated placement High forward surge current capability High temperature soldering guaranteed: 250 C/10 seconds at terminals Glass passivated chip junction Compliant to RoHS Directive 2011/65/EU Compliant to Halogen-free SMC/DO-214AB 0.245(6.22) 0.220(5.59) 0.126 (3.20) 0.114 (2.90) 0.280(7.11) 0.260(6.60) 0.012(0.305) 0.006(0.152) 0.103(2.62) 0.079(2.06) Mechanical data Case: JEDEC DO-214AB molded plastic body Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any 0.060(1.52) 0.030(0.76) 0.008(0.203)MAX. 0.320(8.13) 0.305(7.75) Dimensions in inches and (millimeters) Maximum ratings and Electrical Characteristics (AT T A=25 oC unless otherwise noted) MAX. UNIT Forward rectified current See Fig.1 IO 3.0 A Forward surge current 8.3ms single half sine-wave (JEDEC methode) I FSM 100 A PARAMETER CONDITIONS V R = V RRM T A = 25 OC Reverse current Symbol MIN. TYP. 5.0 IR O V R = V RRM T A = 100 C Thermal resistance Junction to ambient NOTE 1 R θJA 65 Diode junction capacitance f=1MHz and applied 4V DC reverse voltage CJ 50 Storage temperature T STG *1 V RRM (V) V RMS*2 (V) *3 VR (V) US3A-C 50 35 50 US3B-C 100 70 100 SYMBOLS US3D-C 200 140 200 US3G-C 400 280 400 US3J-C 600 420 600 US3K-C 800 560 800 US3M-C 1000 700 1000 *4 VF (V) *5 t rr (ns) Operating temperature T J, ( OC) μA 50 O pF O +150 -65 C/W C *1 Repetitive peak reverse voltage *2 RMS voltage 1.00 50 *3 Continuous reverse voltage 1.40 -55 to +150 *4 Maximum forward voltage@I F=3.0A 1.70 75 *5 Maximum Reverse recovery time, note 2 Note: 1.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas 2. Reverse recovery time test condition, I F =0.5A, I R =1.0A, I RR =0.25A http://www.anbonsemi.com TEL:+86-755-23776891 FAX:+86-755-81482182 Page 1 Document ID Issued Date Revised Date AS-3030012 2003/03/08 2023/09/07 Revision F Page. 3 PDF
Документация на US3M-C 

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Дата модификации: 24.09.2014

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