BG150B12UX2S-I

BYD
BG150B12UX2S-I IGBT Power Module BYD Microelectronics Co., Ltd. VCE=1200V Preliminary Data General Description Features BYD IGBT Power Module BG150B12UX2S-I provides fast switching characteristic as well as high short circuit capability, which introduce the advanced IGBT chip/FWD and improved connection.       IC=150A High speed IGBT in trench/field stop technology Including ultr...
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BG150B12UX2S-I IGBT Power Module BYD Microelectronics Co., Ltd. VCE=1200V Preliminary Data General Description Features BYD IGBT Power Module BG150B12UX2S-I provides fast switching characteristic as well as high short circuit capability, which introduce the advanced IGBT chip/FWD and improved connection.       IC=150A High speed IGBT in trench/field stop technology Including ultra fast & soft recovery anti-parallel FWD Low inductance Standard package High short circuit capability Fast switching and short tail current Applications  Induction heating Characteristic Values Parameter Symbol Conditions Temperature Value Unit Absolute Maximum Ratings Collector-emitter voltage Continuous collector current VCES IC VGE=0V Tj=25℃ 1200 V — Tc=70℃ 150 A Peak collector current ICRM ICRM =2IC — 300 A Gate-emitter voltage VGES — — +/-20 V Total power dissipation Ptot per switch (IGBT) Tc = 25℃ 1000 W IGBT short circuit SOA tpsc Tvj≤25℃ 10 us VCC=600V, VGE≤15V VCEM≤1200V Max. junction temperature Tvj max — — 175 ℃ Operation junction temperature Tvj op — — -40~150 ℃ Storage temperature range Tstg — — -40~125 ℃ Diode DC forward current IF — Tc=80℃ 100 A IFRM=2IF — 200 A — A2s 2500 V Peak forward current IFRM I2t-value, Diode I2 t VR=0V,t=10ms Tj=125℃ Isolation voltage Visol t=1min,f=50Hz — Datasheet WI-D06-J-0117 Rev.A/0 Page 1 of 9 PDF
Документация на BG150B12UX2S-I 

BG150B12UX2S-I - BYD Semiconductor - www.igbtsemi.com

Дата модификации: 04.08.2023

Размер: 410.9 Кб

9 стр.

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