BG50B12UX3-I

BYD
BG50B12UX3-I IGBT Power Module BYD Microelectronics Co., Ltd. VCE=1200V Preliminary General Description Features BYD IGBT Power Module BG50B12UX3-I provides low switching loss as well as high short circuit capability, which introduce the advanced IGBT chip/FWD and improved connection.       IC=50A Half-bridge Low inductance Standard package High short circuit capability Ultra low...
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BG50B12UX3-I IGBT Power Module BYD Microelectronics Co., Ltd. VCE=1200V Preliminary General Description Features BYD IGBT Power Module BG50B12UX3-I provides low switching loss as well as high short circuit capability, which introduce the advanced IGBT chip/FWD and improved connection.       IC=50A Half-bridge Low inductance Standard package High short circuit capability Ultra low conduction and switching loss Including ultra fast & soft recovery anti-parallel FWD Applications      AC motor control Inverters Servo UPS (Uninterruptible Power Supplies) Electric welding Characteristic Values Parameter Symbol Conditions Temperature Value Unit Absolute Maximum Ratings Collector-emitter voltage Continuous collector current VCES IC VGE=0V Tj=25℃ 1200 V — Tc=80℃ 50 A Peak collector current ICRM ICRM =2IC — 100 A Gate-emitter voltage VGES — — +/-20 V Total power dissipation Ptot per switch (IGBT) Tc = 25℃ 429 W IGBT short circuit SOA tpsc Tvj≤25℃ 10 us VCC=800V, VGE≤15V VCEM≤1200V Max. junction temperature Tvj max — — 175 ℃ Operation junction temperature Tvj op — — -40~150 ℃ Storage temperature range Tstg — — -40~125 ℃ Diode DC forward current IF — Tc=80℃ 50 A IFRM=2IF — 100 A — A2s AC2500 V Peak forward current IFRM I2t-value, Diode I2 t VR=0V,t=10ms Tj=125℃ Isolation voltage Visol t=1min,f=50Hz — Datasheet WI-D06-J-0121 Rev.A/1 Page 1 of 9 PDF
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Дата модификации: 04.08.2023

Размер: 392.7 Кб

9 стр.

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