ID7S625SBC-R1

Chipown
Chipown ID7S625 High Voltage High Side & Low Side Gate Drive IC General description Features The ID7S625 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels based on P_SUB P_EPI process. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 V...
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Внешний вид серии ID7S625

Технические характеристики

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Корпус SO-16 SOIC16
Кол-во нижних каналов
Кол-во верхних каналов
Максимальное напряжение смещения
Максимальный выходной ток нарастания
Максимальный выходной ток спада
Опции
Рабочая температура
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Chipown ID7S625 High Voltage High Side & Low Side Gate Drive IC General description Features The ID7S625 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels based on P_SUB P_EPI process. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 V. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications.        Fully operational to +600 V 3.3 V /5 V/15 V logic compatible Floating channel designed for bootstrap operation Gate drive supply range from 10 V to 20 V UVLO for both channels 2.5A Output Current Capability Matched propagation delay for both channels Package/Order Information Application    DC/DC Converter Power MOSFET or IGBT driver DC/AC Converter 9 NC HO 8 10 NC VB 7 11 VDD VS 6 12 HIN NC 5 13 SD NC 4 14 LIN VCC 3 15 VSS COM 2 16 NC LO 1 ID7S625 Order code Package ID7S625SBC-R1 SOW16 Typical Application Circuit VDC, up to 600V 3.3V-5V Q3 Q1 3 9 NC HO 8 8 HO NC 10 NC VB 7 7 VB NC 7 11 VDD VS 6 6 VS VDD 11 12 HIN NC 5 5 NC HIN 12 13 SD NC 4 4 NC 13 14 LIN VCC 3 3 VCC 15 VSS COM 2 2 COM SD LI N VSS 16 NC LO 1 1 LO NC 16 ID7S625 L C 1 8 3.3V-5V ID7S625 12V-15V Q2 12V-15V AC OUTPUT Q4 4 14 15 2 MCU Note: 1. VCC supply voltage, for IGBTs, should be 15V, for MOSFETs, should be 12V-15V. 2. Pull down resistor between Gate and Source of power device, the value is 10k ohms. 3. Driver circuit, turn on and turn off channel should be independently, the resistors value according to power device. 4. The resistor between VCC and bootstrap diode, to avoid VBS dv/dt. www.chipown.com Wuxi Chipown Microelectronics Limited Rev.1.0 1/7 PDF
Документация на ID7S625SBC-R1 

Chipown

Дата модификации: 17.09.2023

Размер: 433.1 Кб

7 стр.

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