PN7113SW-B1

Chipown
Chipown PN7113 High Voltage High Side & Low Side Gate Drive IC General Description Features The PN7113 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels based on P_SUB P_EPI process. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600V. L...
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Технические характеристики

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Корпус SO-16 SOIC16
Кол-во нижних каналов
Кол-во верхних каналов
Максимальное напряжение смещения
Опции
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Chipown PN7113 High Voltage High Side & Low Side Gate Drive IC General Description Features The PN7113 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels based on P_SUB P_EPI process. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600V. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications.        Fully operational to +600V 3.3V /5V/15V logic compatible Floating channel designed for bootstrap operation Gate drive supply range from 10V to 20V UVLO for both channels 2.5A Output Current Capability Matched propagation delay for both channels Package/Order Information Applications    DC/DC Converter Power MOSFET or IGBT driver DC/AC Converter 9 NC HO 8 10 NC VB 7 11 VDD VS 6 12 HIN NC 5 13 SD NC 4 14 LIN VCC 3 15 VSS COM 2 16 NC LO 1 PN7113 Order code Package PN7113SW-B1 SOP16 Typical Application Circuit VDC, up to 600V 3.3V-5V Q3 Q1 3 9 NC HO 8 8 HO NC 10 NC VB 7 7 VB NC 7 11 VDD VS 6 6 VS VDD 11 12 HIN NC 5 5 NC HIN 12 13 SD NC 4 4 NC SD 13 14 LIN VCC 3 3 VCC LIN 14 15 VSS COM 2 2 COM VSS 15 16 NC LO 1 1 LO NC 16 PN7113 L C 1 8 3.3V-5V PN7113 12V-15V Q2 12V-15V AC OUTPUT Q4 4 2 MCU Note: 1. VCC supply voltage, for IGBTs, should be 15V, for MOSFETs, should be 12V-15V. 2. Pull down resistor between Gate and Source of power device, the value is 10k ohms. 3. Driver circuit, turn on and turn off channel should be independently, the resistors value according to power device. 4. The resistor between VCC and bootstrap diode, to avoid VBS dv/dt. www.chipown.com Wuxi Chipown Microelectronics Limited Rev.1.0 1/7 PDF
Документация на PN7113SW-B1 

Chipown

Дата модификации: 02.11.2022

Размер: 406 Кб

7 стр.

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