CRJQ99N65G2F

CR Micro
CRJQ99N65G2F SJMOS N-MOSFET 650V, 90mΩ, 30A 华润微电子(重庆)有限公司 Features Product Summary • CRM(CQ) Super_Junction technology VDS,min 650V • Much lower Ron*A performance for On-state efficiency RDS(on),typ 90mΩ • Better efficiency due to very low FOM ID 30A • Ultra-fast body diode • Qualified for industrial grade applications according to JEDEC Applications 100% DVDS Tested • ...
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Тип Наименование Корпус Упаковка i Карточка
товара
P= WMJ36N65C4 (WAYON)
 
TO-247-3

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CRJQ99N65G2F SJMOS N-MOSFET 650V, 90mΩ, 30A 华润微电子(重庆)有限公司 Features Product Summary • CRM(CQ) Super_Junction technology VDS,min 650V • Much lower Ron*A performance for On-state efficiency RDS(on),typ 90mΩ • Better efficiency due to very low FOM ID 30A • Ultra-fast body diode • Qualified for industrial grade applications according to JEDEC Applications 100% DVDS Tested • LED/LCD/PDP TV and monitor Lighting 100% Avalanche Tested • Solar/Renewable/UPS-Micro Inverter System • Charger • Power Supply Package Marking and Ordering Information Part # Marking Package Packing Reel Size Tape Width Qty CRJQ99N65G2F CRJQ99N65G2F TO-247-3L Tube N/A N/A 25pcs Symbol Value Unit VDS 650 V ID 30 A Absolute Maximum Ratings Parameter Drain-source voltage Continuous drain current 1) TC = 25°C TC = 100°C 19 2) ID,pulse 91 A EAS 480 mJ dv/dt 50 V/ns Gate-Source voltage VGS ±30 V Power dissipation (TC = 25°C) Ptot 245 W IS 30 A (TC = 25°C) IS,pulse 91 A 3) dv/dt 50 V/ns Tj , Tstg -55...+150 °C Pulsed drain current (TC = 25°C, tp limited by Tj,max) Avalanche energy, single pulse (L=30mH) MOSFET dv/dt ruggedness Continuous diode forward current(TC = 25°C) Diode pulse current 2) Recovery diode dv/dt Operating junction and storage temperature 1) Limited by Tj,max. Maximum Duty Cycle D = 0.50 2) Pulse width tp limited by Tj,max 3) Identical low side and high side switch with identical Rg Rev2.1 ©China Resources Microelectronics (Chongqing) Limited Page 1 PDF
Документация на CRJQ99N65G2F 

CRJQ99N65G2F Datasheet V2.1B.xlsx

Дата модификации: 08.08.2023

Размер: 1.31 Мб

10 стр.

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