CS2N60A4R

CR Micro
Silicon N-Channel Power MOSFET R ○ CS2N60 A4R General Description ： 600 V ID 2 A VDMOSFETs, is obtained by the self-aligned planar Technology P D(TC=25℃) 35 W which reduce the conduction loss, improve switching RDS(ON)Typ 3.6 Ω CS2N60 A4R, the silicon N-channel Enhanced VDSS performance and enhance the avalanche energy. The transistor can be used in various power switching ci...
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  • Корпус: TO252

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Silicon N-Channel Power MOSFET R ○ CS2N60 A4R General Description ： 600 V ID 2 A VDMOSFETs, is obtained by the self-aligned planar Technology P D(TC=25℃) 35 W which reduce the conduction loss, improve switching RDS(ON)Typ 3.6 Ω CS2N60 A4R, the silicon N-channel Enhanced VDSS performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-252, which accords with the RoHS standard. Features：  Fast Switching  Low ON Resistance(Rdson≤4.5Ω)  Low Gate Charge (Typical Data: 9.5nC)  Low Reverse transfer capacitances(Typical:3pF)  100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS Drain-to-Source Voltage Rating Units 600 V 2 A 1.3 A 8 A ±30 V Single Pulse Avalanche Energy 80 mJ Peak Diode Recovery dv/dt 5.0 V/ns Power Dissipation 35 W 0.28 W/℃ 150，–55 to 150 ℃ 300 ℃ Continuous Drain Current ID Continuous Drain Current TC = 100 °C a1 Pulsed Drain Current IDM VGS EAS Gate-to-Source Voltage a2 dv/dt a3 PD Derating Factor above 25°C TJ，Tstg Operating Junction and Storage Temperature Range TL Maximum Temperature for Soldering W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . P ag e 1 of 10 2 0 1 7 V0 1 PDF
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Дата модификации: 19.12.2017

Размер: 515.6 Кб

10 стр.

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