HPD800R450PD-G

CR Micro
Silicon N-Channel Power MOSFET R ○ HPD800R450PD-G General Description ： VDSS(Tjmax) 850 V ID 11 A MOSFETs, is obtained by the super junction technology which P D(TC=25℃) 215 W reduces the conduction loss, improve switching performance and RDS(ON)Typ 0.38 Ω Eoss@400V 2.7 uJ HPD800R450PD-G, the silicon N-channel Enhanced enhance the avalanche energy. The transistor can be u...
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  • Корпус: TO252

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Тип Наименование Корпус Упаковка i Карточка
товара
P- WMO80R480S (WAYON)
 
TO252 в ленте 2500 шт
 

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Silicon N-Channel Power MOSFET R ○ HPD800R450PD-G General Description ： VDSS(Tjmax) 850 V ID 11 A MOSFETs, is obtained by the super junction technology which P D(TC=25℃) 215 W reduces the conduction loss, improve switching performance and RDS(ON)Typ 0.38 Ω Eoss@400V 2.7 uJ HPD800R450PD-G, the silicon N-channel Enhanced enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package type is TO-252, which accords with the RoHS standard. Features：  Fast Switching  Low Gate Charge  Low Reverse transfer capacitances  100% Single Pulse avalanche energy Test  Halogen Free  Zener-Protected Applications： Power switch circuit of adaptor, charger and LED. Absolute（Tj= 25℃ unless otherwise specified）： Symbol Parameter VDSS Drain-to-Source Voltage( V GS= 0V) Rating Units 800 V Continuous Drain Current TC = 25 °C 11 A Pulsed Drain Current TC = 25 °C 33 A Gate-to-Source Voltage ±30 V Single Pulse Avalanche Energy 350 mJ Peak Diode Recovery dv/dt 15 V/ns dv/dt MOSFET dv/dt ruggedness 50 V/ns dif/dt Maximum diode communication speed 500 A/us PD Power Dissipation(T C=25°C) 215 W VESD(G-S) Gate source ESD (HBM-C= 100pF, R=1.5kΩ) 3000 V TJ，Tstg Operating and Storage Temperature Range –55…+150 ℃ ID a1 a2 IDM VGSS EAS a3 dv/dt a4 W U X I C H I N A R E S O U R C E S H U A J I N G M I C R O E L E C T R O N I C S C O . , LT D . Page 1 of 10 2 0 20 V0 1 PDF
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Дата модификации: 09.12.2020

Размер: 833.8 Кб

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