BU406-JSM

JSMicro
BU406 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR  High Voltage  Fast Switching Speed: tf = 750 ns (max)  Low Saturation Voltage: VCE(sat) = 1 V (max) @ 5 A  Pb−Free Packages are Available* or FEATURES VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current PC Collector Power Dissipation Value Unit 400 V 200 V ...
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BU406 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR  High Voltage  Fast Switching Speed: tf = 750 ns (max)  Low Saturation Voltage: VCE(sat) = 1 V (max) @ 5 A  Pb−Free Packages are Available* or FEATURES VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current PC Collector Power Dissipation Value Unit 400 V 200 V 6 V 7 A 60 W du Parameter co n Symbol ct MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 62.5 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ Se mi Thermal Resistance from Junction to Ambient RθJA ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit V(BR)CBO IC=100uA, IE=0 400 * IC=100mA,IB=0 200 V V(BR)EBO IE=100uA,IC=0 6 V Collector cut-off current ICES VCB=400V,IE=0 5 mA Collector cut-off current ICES VCB=250V,IE=0 1 mA Collector cut-off current ICBO VCB=300V,IE=0 5 μA Emitter cut-off current IEBO VEB=6V,IC=0 1 mA hFE VCE=5V, IC=1A Collector-base breakdown voltag O Collector-emitter breakdown voltage JS MI CR Emitter-base breakdown voltage DC current gain V(BR)CEO 50 V 100 Collector-emitter saturation voltage VCE(sat)* IC=5A,IB=500mA 1 V Base-emitter saturation voltage VBE(sat)* IC=5A,IB=500mA 1.2 V Collector output capacitance Cob fT Transition frequency 80 VCB=10V,IE=0, f=1MHz VCE=5V,IC=0.2A,f=10MHz *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. www.jsmsemi.com 10 pF MHz PDF
Документация на BU406-JSM 

杰盛微半导体

Дата модификации: 03.01.2024

Размер: 1 Мб

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