AM2520PD1BT09

Kingbright
AM2520PD1BT09 Photodiode DESCRIPTION z PACKAGE DIMENSIONS Made with PIN silicon phototransistor chips FEATURES z z z z Mechanically and spectrally matched to the infrared emitting LED lamp Moisture sensitivity level: 3 Package: 1000 pcs / reel RoHS compliant APPLICATIONS z z z z Infrared applied systems Optoelectronic switches Photodetector control circuits Sensor technology RECOMMENDED...
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AM2520PD1BT09 Photodiode DESCRIPTION z PACKAGE DIMENSIONS Made with PIN silicon phototransistor chips FEATURES z z z z Mechanically and spectrally matched to the infrared emitting LED lamp Moisture sensitivity level: 3 Package: 1000 pcs / reel RoHS compliant APPLICATIONS z z z z Infrared applied systems Optoelectronic switches Photodetector control circuits Sensor technology RECOMMENDED SOLDERING PATTERN (units : mm; tolerance : ± 0.1) Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.25(0.01") unless otherwise noted. 3. The specifications, characteristics and technical data described in the datasheet are subject to change without prior notice. 4. The device has a single mounting surface. The device must be mounted according to the specifications. ABSOLUTE MAXIMUM RATINGS at TA=25°C Parameter Max.Ratings Units 150 mW Operating Temperature -40 to +85 °C Storage Temperature -40 to +85 °C Power Dissipation Note: 1. Relative humidity levels maintained between 40% and 60% in production area are recommended to avoid the build-up of static electricity – Ref JEDEC/JESD625-A and JEDEC/J-STD-033. © 2018 Kingbright. All Rights Reserved. Spec No: DSAC6116 / 1202001056 Rev No: V.4 Date: 08/03/2018 Page 1 / 3 PDF
Документация на AM2520PD1BT09 

AM2520PD1BT09(Ver.4)

Дата модификации: 03.08.2018

Размер: 228.5 Кб

3 стр.

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    KP-3216F3C (KGB)