L2SA1037AKSLT1G

LRC
LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon Features z We declare that the material of product compliance with RoHS requirements. zS- Prefix for Automotive and Other Applications Requiring Unique Site L2SA1037AKQLT1G Series S-L2SA1037AKQLT1G Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 ORDERING INFORMATION Device L2SA1037AKQLT1G S-L2S...
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Технические характеристики

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Корпус —
Тип проводимости и конфигурация
Рассеиваемая мощность
Ток коллектора
Коэффициент усиления по току
Примечание Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, PNP
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LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon Features z We declare that the material of product compliance with RoHS requirements. zS- Prefix for Automotive and Other Applications Requiring Unique Site L2SA1037AKQLT1G Series S-L2SA1037AKQLT1G Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 ORDERING INFORMATION Device L2SA1037AKQLT1G S-L2SA1037AKQLT1G L2SA1037AKQLT3G S-L2SA1037AKQLT3G Shipping Package 1 SOT23 3000/Tape & Reel SOT23 10000/Tape & Reel 2 SOT– 23 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO –50 V Collector–Base Voltage V CBO –60 V Emitter–Base Voltage V –6.0 V EBO 3 COLLECTOR 1 BASE 2 EMITTER Collector Current — Continuous IC –150 mAdc Collector power dissipation PC 0.2 W Junction temperature Tj 150 °C Storage temperature T stg -55 ~+150 °C DEVICE MARKING L2SA1037AKQLT1G =FQ L2SA1037AKSLT1G=G3F L2SA1037AKRLT1G=FR ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Collector–Emitter Breakdown Voltage (IC = –1 mA) Emitter–Base Breakdown Voltage (IE = – 50 µA) Collector–Base Breakdown Voltage (IC = – 50 µA) Collector Cutoff Current (VCB = – 60 V) Emitter cutoff current (VEB = – 6 V) Collector-emitter saturation voltage (IC/ IB = – 50 mA / – 5m A) DC current transfer ratio (V CE = – 6 V, I C= –1mA) Transition frequency (V CE = – 12 V, I E= 2mA, f=30MHz ) Output capacitance (V CB = – 12 V, I E= 0A, f =1MHz ) Symbol Min Typ Max Unit V (BR)CEO – 50 — — V V (BR)EBO –6 — — V V (BR)CBO – 60 — — V I CBO — — – 0.1 µA I EBO — — – 0.1 µA — — -0.5 V h FE 120 –– 560 –– fT — 140 –– MHz C ob — 4.0 5.0 pF V CE(sat) h FE values are classified as follows: * hFE Q 120~270 R 180~390 S 270~560 Rev.O 1/4 PDF
Документация на L2SA1037AKRLT1G 

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Дата модификации: 22.08.2012

Размер: 142.6 Кб

4 стр.

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    BC807-25 (YJ)