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LBTN3100DPTUG

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LBTN3100DPTUG S-LBTN3100DPTUG 4 NPN Power transistors 1. FEATURES High collector current ● Low collector-emitter saturation voltage ● We declare that the material of product compliance with 2 ● 3 1 TO-252 RoHS requirements and Halogen Free. ● S-prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. 4,2 Col...
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  • Корпус: TO252

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Тип Наименование Корпус Упаковка i Карточка
товара
P= MJD31C (YJ)
 
TO252 в ленте 2500 шт
 
P= MJD31C TO-252-2L (JSCJ)
 
TO2522L 2500 шт
 

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LBTN3100DPTUG S-LBTN3100DPTUG 4 NPN Power transistors 1. FEATURES High collector current ● Low collector-emitter saturation voltage ● We declare that the material of product compliance with 2 ● 3 1 TO-252 RoHS requirements and Halogen Free. ● S-prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. 4,2 Collector 2. DEVICE MARKING AND ORDERING INFORMATION Device Marking LBTN3100DPTUG N31 Shipping 2500/Tape&Reel 1 Base 3. MAXIMUM RATINGS(Ta = 25ºC) Parameter 3 Emitter Symbol Limits Unit Collector–Emitter Voltage VCEO 100 V Collector–Base Voltage VCBO 100 V Emitter–Base Voltage VEBO 5 V IC 3 A ICM 5 A IB 1 A PD 1.75 W Tj 150 ℃ Tstg -55~+150 ℃ Collector Current — Continuous Peak collector current (tp ≤10 ms) Base current Total Power Dissipation (Note 1) @ TA = 25°C Junction Temperature Storage Temperature Range 4. THERMAL CHARACTERISTICS Parameter Thermal Resistance, Junction−to−Ambient(Note 1) Symbol RΘJA Limits 71.4 Unit °C/W 1. These ratings are applicable when surface mounted on the minimum pad sizes recommended. Leshan Radio Company, LTD. Rev.C Oct. 2022 1/5 PDF
Документация на LBTN3100DPTUG 

Дата модификации: 24.05.2023

Размер: 576.3 Кб

6 стр.

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