LBZT52B4V3T1G

LRC
LESHAN RADIO COMPANY, LTD. LBZT52B2V0T1G Series Surface Mount Zener Diodes Features: *500mw Power Dissipation *Ideal for Surface Mountted Application *Zener Breakdown Voltage Range 2.0V to 36V *Pb-Free package is available 1 2 Mechanical Data: SOD-123 *Case : SOD-123 Molded plastic *Terminals: Solderable per MIL-STD-202, Method 208 *Polarity: Cathode Indicated by Polarity Band *Marking: ...
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Технические характеристики

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Корпус SOD123
Напряжение стабилизации
Ток стабилизации (макс)
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Аналоги 4

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Тип Наименование Корпус Упаковка i U стаб I стаб Z T раб Примечания Карточка
товара
P= BZT52B4V3 (YJ)
 
SOD123 в ленте 3000 шт
 
 — Zener Diode, 4.3V V(Z), 2.09%, 0.5W, Silicon, Unidirectional
P= BZT52C4V3 (JSCJ)
 
SOD123 в ленте 3000 шт Zener Diode, 4.3V V(Z), 7%, 0.5W
P= BZT52C4V3 (YJ)
 
SOD123 3000 шт
 
 Zener Diode, 4.3V V(Z), 6.98%, 0.5W, Silicon, Unidirectional
P= BZT52C4V3 (SHIKUES)
 
SOD123 в ленте 12050 шт — —

Файлы 1

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LESHAN RADIO COMPANY, LTD. LBZT52B2V0T1G Series Surface Mount Zener Diodes Features: *500mw Power Dissipation *Ideal for Surface Mountted Application *Zener Breakdown Voltage Range 2.0V to 36V *Pb-Free package is available 1 2 Mechanical Data: SOD-123 *Case : SOD-123 Molded plastic *Terminals: Solderable per MIL-STD-202, Method 208 *Polarity: Cathode Indicated by Polarity Band *Marking: Marking Code (See Specific marking table) *Weigh: 0.01grams(approx) Equivalent Circuit Diagram 1 Cathode Maximum Ratings and Electrical Characteristics Characteristics Thermal Resistance Junction to Ambient Air (TA=25 C Unless Otherwise Noted) Value Unit PD 500 0 mW R JA 305 C/W VF 0.9 V Tj,TSTG -55 t o +125 Forward Voltage @ IF=10mA Junction and Storage Temperature Range Anode Symbol Total Power Dissipation on FR-5 Board (1) (1) 2 C - - - - NOTES: 1. Device mounted on ceramic PCB; 7.6mm 9.4mm 0.87mm with pad areas 25mm Ratings and Characteristic curves Marking 02 LBZT52B2V2T1G LBZT52B2V4T1G 12 22 LBZT52B2V7T1G 32 LBZT52B3V0T1G 42 LBZT52B13T1G 35 45 55 Marking Device LBZT52B9V1T1G L2 LBZT52B10T1G 05 LBZT52B11T1G 15 LBZT52B12T1G 25 LBZT52B3V3T1G LBZT52B3V6T1G 52 LBZT52B15T1G 62 LBZT52B16T1G LBZT52B3V9T1G 72 LBZT52B4V3T1G LBZT52B4V7T1G LBZT52B5V1T1G LBZT52B5V6T1G LBZT52B6V2T1G LBZT52B6V8T1G LBZT52B7V5T1G LBZT52B8V2T1G 82 LBZT52B18T1G LBZT52B20T1G LBZT52B22T1G LBZT52B24T1G LBZT52B27T1G LBZT52B30T1G LBZT52B33T1G LBZT52B36T1G - 65 75 85 95 A5 C5 E5 F5 - 0.6 , Device LBZT52B2V0T1G PD ,POWER DISSIPATION(W) Device Marking Code 92 A2 C2 E2 F2 H2 J2 2 0.5 0.4 0.3 0.2 0.1 0 0 25 50 75 100 125 150 TA,AMBIENT TEMPERATURE( C) FIG. 1 Power Disspation vs Ambient temperaute O 1/3 PDF
Документация на LBZT52B12T1G 

MM3Z2V4-1.pdf

Дата модификации: 27.04.2009

Размер: 271.5 Кб

3 стр.

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    1N4728A T/B (DC)