NSI6601C-DSPR

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NSi6601 Single-Channel Isolated Gate Driver Datasheet (EN) 1.2 Product Overview Safety Regulatory Approvals The NSi6601 is a single-channel isolated gate driver designed to drive IGBTs, power MOSFETs and SiC MOSFETs in many applications. It provides split outputs that control the rise and fall time individually. It can source and sink 5A peak current. The NSi6601 is available in SOP8(150 mil...
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Корпус SO-8 SOIC8
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NSi6601 Single-Channel Isolated Gate Driver Datasheet (EN) 1.2 Product Overview Safety Regulatory Approvals The NSi6601 is a single-channel isolated gate driver designed to drive IGBTs, power MOSFETs and SiC MOSFETs in many applications. It provides split outputs that control the rise and fall time individually. It can source and sink 5A peak current. The NSi6601 is available in SOP8(150 mil) or SOP8(300 mil) package, which can support 3000VRMS or 5700VRMS isolation per UL1577. System robustness is supported by 150kV/us minimum common-mode transient immunity (CMTI). The driver operates with a maximum supply voltage of 32V, while the input-side accepts from 3.1V to 17V supply voltage. Under voltage lock-out (UVLO) protection is supported by all the power supply voltage pins. With high driving current, excellent robustness, wide supply voltage range and fast signal propagation, NSi6601 is suitable for high reliability, power density and efficiency switching power system.  UL recognition: 3000VRMS SOP8(150 mil) and 5700VRMS SOP8(300 mil) for 1 minute per UL1577  DIN VDE V 0884-11:2017-01  CSA component notice 5A  CQC certification per GB4943.1-2011 Key Features Applications  Isolated DC/DC and AC/DC Power Supplies  High Voltage PFC  Solar Inverters  Motor Drives and EV Charging  UPS and Battery Chargers Device Information Part Number NSi6601B-DSPR UVLO Level 9V NSi6601C-DSPR 13V  Isolated single-channel driver  Input side supply voltage: 3.1V to 17V NSi6601C-DSWVR 13V  Driver side supply voltage: up to 32V with 9V and 13 UVLO options NSi6601B-DSWVR 9V  5A peak source and sink output current  High CMTI: ±150kV/us  78ns typical propagation delay  Operation ambient temperature: -40°C ~125°C  AEC-Q100 Grade1 option  RoHS-compliant packages: Package SOP8 (150 mil) SOP8 (150 mil) SOP8 (300 mil) SOP8 (300 mil) AEC-Q100 NO NO NO NO Functional Block Diagrams SOP8(150 mil) SOP8(300 mil) NSi6601 Block Diagram Copyright © 2021, NOVOSENSE Page 1 PDF
Документация на NSI6601B-DSPR 

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Дата модификации: 24.06.2022

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