EE-SX1070

Omron
OPTO SWITCH, SLOTTED; Channels, No. of:1; Output Type:Transistor; Current, Input:20mA; Voltage, Output Max:30V; Case Style:Slotted Switch; Temperature, Operating Range:-25°C to +95°C; Current, If AV:50mA; Depth, External:6mm; Length / Height, External:16.2mm; Optocoupler Type:Opto Switch; Pins, No. of:4; Pitch, Row:13.8mm; Time, Fall:4чs; Time, Rise:4чs; Voltage, Vce Sat Max:0.4V; Voltage, Vceo:30V; Width, External:17.7mm; Width, Gap:8mm
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Фотография EE-SX1070

Технические характеристики

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Photomicrosensor (Transmissive) EE-SX1070 Be sure to read Precautions on page 25. ■ Dimensions ■ Features Note: All units are in millimeters unless otherwise indicated. • Wide model with a 8-mm-wide slot. • PCB mounting type. • High resolution with a 0.5-mm-wide aperture. JAPAN 17.7 6±0.2 ■ Absolute Maximum Ratings (Ta = 25°C) Item 0.5±0.1 8 +0.2 −0.1 Two, C1 Emitter Optical axis 0 10 −0.2 7.5±0.2 2.2 2.5 6.2 Detector Two, 0.7±0.1 Four, 0.5 Four, 0.25 (2.5) (13.8) 2.35±0.1 (2.5) 5.2±0.1 K C A E 6.6±0.1 Ambient temperature Two, 0.7±0.1 dia. Symbol IF 50 mA (see note 1) Pulse forward current IFP 1A (see note 2) Reverse voltage VR 4V Collector–Emitter voltage VCEO 30 V Emitter–Collector voltage VECO --- Collector current IC 20 mA Collector dissipation PC 100 mW (see note 1) Operating Topr –25°C to 95°C Storage Tstg –30°C to 100°C Tsol 260°C (see note 3) Internal Circuit K C A E Soldering temperature Unless otherwise specified, the tolerances are as shown below. Dimensions 3 mm max. Terminal No. A K C E Name Anode Cathode Collector Emitter Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C. 2. The pulse width is 10 μs maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. Tolerance ±0.3 3 < mm ≤ 6 ±0.375 6 < mm ≤ 10 ±0.45 10 < mm ≤ 18 ±0.55 18 < mm ≤ 30 ±0.65 Rated value Forward current ■ Electrical and Optical Characteristics (Ta = 25°C) Item Emitter Detector Forward voltage Symbol Value VF 1.2 V typ., 1.5 V max. Condition IF = 30 mA Reverse current IR 0.01 μA typ., 10 μA max. VR = 4 V Peak emission wavelength λP 940 nm typ. IF = 20 mA Light current IL 0.5 mA min., 14 mA max. IF = 20 mA, VCE = 10 V Dark current ID 2 nA typ., 200 nA max. VCE = 10 V, 0 lx Leakage current ILEAK --- --- Collector–Emitter saturated voltage VCE (sat) 0.1 V typ., 0.4 V max. IF = 20 mA, IL = 0.1 mA Peak spectral sensitivity wavelength λP 850 nm typ. VCE = 10 V Rising time tr 4 μs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA Falling time tf 4 μs typ. VCC = 5 V, RL = 100 Ω, IL = 5 mA 46 EE-SX1070 Photomicrosensor (Transmissive) PDF
Документация на серию EE-SX1070 

Micro Sensing Device Data Book

Дата модификации: 15.06.2009

Размер: 101.9 Кб

2 стр.

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