EE-SY113

Omron
OPTO SWITCH, REFLECTIVE; Channels, No. of:1; Output Type:Transistor; Current, Input:20mA; Voltage, Output Max:30V; Temperature, Operating Range:-40°C to +80°C; Current, If AV:50mA; Depth, External:6.2mm; Distance, Reflective Sensing:4.4mm; Length / Height, External:8.4mm; Optocoupler Type:Opto Switch; Pins, No. of:4; Power Dissipation:100mW; Voltage, Output:30V; Width, External:15.2mm
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Технические характеристики

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Примечания SENSOR OPTO TRANS 4.4MM REFL PCB
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Photomicrosensor (Reflective) EE-SY113 ■ Dimensions ■ Features Note: All units are in millimeters unless otherwise indicated. • Compact reflective Photomicrosensor (EE-SY110) with a molded housing and a dust-tight cover. • RoHS Compliant. ■ Absolute Maximum Ratings (Ta = 25°C) Four, 0.5 Emitter Notch for directional discrimination Item Symbol Forward current IF 50 mA (see note 1) Pulse forward current IFP 1 A (see note 2) Reverse voltage VR 4V Collector–Emitter voltage VCEO 30 V Emitter–Collector voltage VECO --- Collector current IC 20 mA Collector dissipation PC 100 mW (see note 1) Ambient tem- Operating perature Storage Topr –40°C to 80°C Tstg –40°C to 85°C Soldering temperature Tsol 260°C (see note 3) 2.5 Detector Four, 0.25 15 to 18 Internal Circuit A C K Terminal No. Unless otherwise specified, the tolerances are as shown below. Dimensions E Name A Anode K C Cathode Collector E Emitter Rated value Tolerance 3 mm max. ±0.3 3 < mm ≤ 6 ±0.375 6 < mm ≤ 10 ±0.45 10 < mm ≤ 18 ±0.55 18 < mm ≤ 30 ±0.65 Note: 1. Refer to the temperature rating chart if the ambient temperature exceeds 25°C. 2. The pulse width is 10 μs maximum with a frequency of 100 Hz. 3. Complete soldering within 10 seconds. ■ Ordering Information Description Model Photomicrosensor (reflective) EE-SY113 ■ Electrical and Optical Characteristics (Ta = 25°C) Item Emitter Detector Symbol Value Condition Forward voltage VF 1.2 V typ., 1.5 V max. IF = 30 mA Reverse current IR 0.01 μA typ., 10 μA max. VR = 4 V Peak emission wavelength λP 940 nm typ. IF = 20 mA Light current IL 160 μA min., 1,600 μA max. IF = 20 mA, VCE = 10 V White paper with a reflection ratio of 90%, d = 4.4 mm (see note) Dark current ID 2 nA typ., 200 nA max. VCE = 10 V, 0 lx Leakage current ILEAK 2 μA max. IF = 20 mA, VCE = 10 V with no reflection Collector–Emitter saturated voltage VCE (sat) --- --- Peak spectral sensitivity wavelength λP 850 nm typ. VCE = 10 V Rising time tr 30 μs typ. VCC = 5 V, RL = 1 kΩ, IL = 1 mA Falling time tf 30 μs typ. VCC = 5 V, RL = 1 kΩ, IL = 1 mA Note: The letter “d” indicates the distance between the top surface of the sensor and the sensing object. Photomicrosensor (Reflective) EE-SY113 215 PDF
Документация EE-SY113 

EE_SY113_1010.fm

Дата модификации: 22.10.2010

Размер: 248.6 Кб

4 стр.

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