2SA720Q

Panasonic Industrial Europe GmbH
Transistors 2SA0719, 2SA0720 (2SA719, 2SA720) Silicon PNP epitaxial planar type For low-frequency power amplification and driver amplification Complementary to 2SC1317, 2SC1318 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 M Di ain sc te on na tin nc ue e/ d ■ Features Rating Unit VCBO −30 V −60 2SA0720 −25 Collector-emitter voltage 2SA0719 (Base open) 2SA0720 VCEO Emitter-base voltage (Col...
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Технические характеристики

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Тип проводимости и конфигурация
Рассеиваемая мощность
Напряжение КЭ максимальное
Ток коллектора
Граничная рабочая частота
Коэффициент усиления по току
  Примечание: Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
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Transistors 2SA0719, 2SA0720 (2SA719, 2SA720) Silicon PNP epitaxial planar type For low-frequency power amplification and driver amplification Complementary to 2SC1317, 2SC1318 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 M Di ain sc te on na tin nc ue e/ d ■ Features Rating Unit VCBO −30 V −60 2SA0720 −25 Collector-emitter voltage 2SA0719 (Base open) 2SA0720 VCEO Emitter-base voltage (Collector open) VEBO −5 V Peak collector current Collector power dissipation Junction temperature Storage temperature V 2.5+0.6 –0.2 −50 2.5+0.6 –0.2 1 IC −500 mA ICP −1 A PC 625 mW Tj 150 °C Tstg −55 to +150 °C 2 3 2.3±0.2 Collector current 0.45+0.15 –0.1 0.45+0.15 –0.1 ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo em u ic t la on te /e st -in in de for x. ma ht t m ion l . Collector-base voltage (Emitter open) Symbol 2SA0719 12.9±0.5 0.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C Parameter 0.7±0.2 • Complementary pair with 2SC1317 and 2SC1318 1: Emitter 2: Collector 3: Base EIAJ: SC-43A TO-92-B1 Package ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emitter open) 2SA0719 Collector-emitter voltage (Base open) 2SA0719 Conditions IC = −10 µA, IE = 0 VCBO Min Typ −30 IC = −10 mA, IB = 0 VCEO −25 Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0 Collector-base cutoff current (Emitter open) ICBO VCB = −20 V, IE = 0 Forward current transfer ratio hFE1 * VCE = −10 V, IC = −150 mA 85 hFE2 VCE = −10 V, IC = −500 mA 40 Collector-emitter saturation voltage VCE(sat) IC = −300 mA, IB = −30 mA Base-emitter saturation voltage VBE(sat) IC = −300 mA, IB = −30 mA −1.1 VCB = −10 V, IE = 50 mA, f = 200 MHz 200 Pl V V −50 2SA0720 Transition frequency Unit −60 2SA0720 fT Collector output capacitance (Common base, input open circuited) Max VCB = −10 V, IE = 0, f = 1 MHz Cob −5 µA 340  − 0.35 − 0.60 6 V − 0.1 −1.5  V V MHz 15 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank Q R S hFE1 85 to 170 120 to 240 170 to 340 Note) The part numbers in the parenthesis show conventional part number. Publication date: January 2003 SJC00002CED 1 PDF
Документация на 2SA720Q 

2SA0719, 2SA0720 SJC00002CED

Дата модификации: 26.07.2006

Размер: 212.6 Кб

4 стр.

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    BC807-25 (YJ)