2SB1322A

Panasonic Industrial Europe GmbH
This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SB1322A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1994A Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) ■ Features • Allowing supply with the radial taping (0.5) (1.0) (0.2) 4.5±0.1 M Di ain sc te on na tin nc ue e/ d 0.7 ■ Absolute Maximum Ratings Ta = 25°C Parameter Sym...
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Технические характеристики

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Корпус TO-262-3
Тип проводимости и конфигурация
Рассеиваемая мощность
Напряжение КЭ максимальное
Ток коллектора
Граничная рабочая частота
Коэффициент усиления по току
Примечание Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
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This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SB1322A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1994A Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) ■ Features • Allowing supply with the radial taping (0.5) (1.0) (0.2) 4.5±0.1 M Di ain sc te on na tin nc ue e/ d 0.7 ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −60 V Collector-emitter voltage (Base open) VCEO −50 V Emitter-base voltage (Collector open) VEBO −5 V Collector current IC −1 A Peak collector current ICP −1.5 A Collector power dissipation * PC 1 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0.45+0.10 –0.05 2.5±0.5 1 14.5±0.5 d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll :// ol d d te te ow ww lo is is na n i w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P ico L d d e e ro n. ab typ ty du pa ou e pe ct d na t l life so ate cy nic st cle .co inf sta .jp orm ge /e a n/ tio . n. (1.0) 0.65 max. 1.05±0.05 0.45+0.10 –0.05 2.5±0.5 2 3 1: Emitter 2: Collector 3: Base MT-2-A1 Package cm2 Note) *: Print circuit board: Copper foil area of 1 or more, and the board thickness of 1.7 mm for the collector portion Symbol Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0 −60 V VCEO IC = −2 mA, IB = 0 −50 V Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0 −5 ICBO VCB = −20 V, IE = 0 on tin Collector-emitter voltage (Base open) ue Parameter Di sc ■ Electrical Characteristics Ta = 25°C ± 3°C Collector-base cutoff current (Emitter open) te na nc e/ Forward current transfer ratio Collector-emitter saturation voltage hFE1 *2 hFE2 *1 M ain Base-emitter saturation voltage *1 Min VCE = −10 V, IC = −500 mA 85 VCE = −5 V, IC = −1 A 50 Typ Max Unit V − 0.1 µA 340   VCE(sat) IC = −500 mA, IB = −50 mA − 0.4 V VBE(sat) IC = −500 mA, IB = −50 mA −1.2 V fT Cob VCB = −10 V, IE = 50 mA, f = 200 MHz 200 VCB = −10 V, IE = 0, f = 1 MHz 20 MHz 30 pF Pl Transition frequency Collector output capacitance (Common base, input open circuited) Conditions Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Rank Q R S No-rank hFE1 85 to 170 120 to 240 170 to 340 85 to 340 Product of no-rank classification is not marked. Publication date: March 2003 SJC00080BED 1 PDF
Документация на 2SB1322A 

2SB1322A SJC00080BED

Дата модификации: 29.11.2011

Размер: 249.5 Кб

4 стр.

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    BC817-40 (YJ)