2SC1318R

Panasonic Industrial Europe GmbH
This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SC1318 Silicon NPN epitaxial planar type For low-frequency power amplification and driver amplification Complementary to 2SA0720  Package M Di ain sc te on na tin nc ue e/ d  Features  Code TO-92B-B1  Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO ...
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Технические характеристики

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Корпус TO-92-3
Тип проводимости и конфигурация
Рассеиваемая мощность
Напряжение КЭ максимальное
Ток коллектора
Граничная рабочая частота
Коэффициент усиления по току
  Примечание: Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
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Файлы 1

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This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SC1318 Silicon NPN epitaxial planar type For low-frequency power amplification and driver amplification Complementary to 2SA0720  Package M Di ain sc te on na tin nc ue e/ d  Features  Code TO-92B-B1  Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 60 V Collector-emitter voltage (Base open) VCEO 50 V Emitter-base voltage (Collector open) VEBO 7 V 0.5 A 1 A 625 mW 150 °C –55 to +150 °C Collector current IC Peak collector current ICP Collector power dissipation PC Junction temperature Tj Storage temperature Tstg  Electrical Characteristics Ta = 25°C±3°C Parameter  Pin Name 1. Emitter 2. Collector 3. Base d p l ea an incl se ed ud p lan m m es ht visi tp t f ed ain ain foll :// ol d d te te ow ww lo is is na n i w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P ico L d d e e ro n. ab typ ty du pa ou e pe ct d na t l life so ate cy nic st cle .co inf sta .jp orm ge /e a n/ tio . n.  Low collector-emitter saturation voltage VCE(sat)  Complementary pair with 2SA0720 Symbol Conditions Min Typ Max Unit VCBO IC = 10 mA, IE = 0 60 V Collector-emitter voltage (Base open) VCEO IC = 10 mA, IB = 0 50 V VEBO IE = 10 mA, IC = 0 7 V ICBO VCB = 20 V, IE = 0 hFE1 * VCE = 10 V, IC = 150 mA 85 hFE2 VCE = 10 V, IC = 500 mA 40 VCE(sat) IC = 300 mA, IB = 30 mA 0.35 0.60 V VBE(sat) IC = 300 mA, IB = 30 mA 1.1 1.5 V fT VCB = 10 V, IE = –50 mA, f = 200 MHz 200 Cre VCB = 10 V, IE = 0, f = 1 MHz on tin Emitter-base voltage (Collector open) ue Collector-base voltage (Emitter open) nc e Forward current transfer ratio /D isc Collector-base cutoff current (Emitter open) te na Collector-emitter saturation voltage Base-emitter saturation voltage M ain Transition frequency 340 6 mA  MHz 15 pF Pl Collector output capacitance (Common base, input open circuited) 0.1 Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank Q R S hFE1 85 to 170 120 to 240 170 to 340 Publication date : October 2008 SJC00420AED 1 PDF
Документация на 2SC1318Q 

2SC1318 SJC00420AED

Дата модификации: 29.11.2011

Размер: 530.3 Кб

5 стр.

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    BC807-25 (YJ)