2SC1847

Panasonic Industrial Europe GmbH
This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SC1847 Silicon NPN epitaxial planar type For medium output power amplification Complementary to 2SA0886 Unit: mm 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 16.0±1.0 d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll :// ol d d te te ow ww lo is is na n i w. win con con nce anc ng f se g U tin tin t e o...
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Технические характеристики

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Корпус TO-220-3 TO-220AB
Тип проводимости и конфигурация
Рассеиваемая мощность
Напряжение КЭ максимальное
Ток коллектора
Граничная рабочая частота
Коэффициент усиления по току
  Примечание: Power Bipolar Transistor, 1.5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
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This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SC1847 Silicon NPN epitaxial planar type For medium output power amplification Complementary to 2SA0886 Unit: mm 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 16.0±1.0 d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll :// ol d d te te ow ww lo is is na n i w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P ico L d d e e ro n. ab typ ty du pa ou e pe ct d na t l life so ate cy nic st cle .co inf sta .jp orm ge /e a n/ tio . n. • Output of 4 W can be obtained by a complementary pair with 2SA0886 • TO-126B package which requires no insulation plate for installation to the heat sink 3.05±0.1 ■ Features 11.0±0.5 3.8±0.3 M Di ain sc te on na tin nc ue e/ d φ 3.16±0.1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 50 V Collector-emitter voltage (Base open) VCEO 40 V Emitter-base voltage (Collector open) VEBO 5 V Collector current IC 1.5 A Peak collector current ICP 3 A Collector power dissipation PC 1.2 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0.75±0.1 0.5±0.1 4.6±0.2 1 2 0.5±0.1 1.76±0.1 2.3±0.2 3 1: Emitter 2: Collector 3: Base TO-126B-A1 Package Symbol Collector-base voltage (Emitter open) VCBO IC = 1 mA, IE = 0 50 V VCEO IC = 2 mA, IB = 0 40 V Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0 1 µA Collector-emitter cutoff current (Base open) ICEO VCE = 10 V, IB = 0 100 µA Emitter-base cutoff current (Collector open) IEBO VEB = 5 V, IC = 0 10 µA Forward current transfer ratio * hFE VCE = 5 V, IC = 1 A 220  Collector-emitter saturation voltage VCE(sat) IC = 2 A, IB = 0.2 A 1 V Base-emitter saturation voltage VBE(sat) IC = 2 A, IB = 0.2 A 1.5 V M ain te na nc e/ on tin Collector-emitter voltage (Base open) ue Parameter Di sc ■ Electrical Characteristics Ta = 25°C ± 3°C fT Collector output capacitance (Common base, input open circuited) Cob Min Typ 80 Max Unit VCB = 5 V, IE = − 0.5 A, f = 200 MHz 150 MHz VCB = 20 V, IE = 0, f = 1 MHz 35 pF Pl Transition frequency Conditions Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank Q R hFE 80 to 160 120 to 220 Publication date: February 2003 SJD00095BED 1 PDF
Документация на 2SC1847 

2SC1847 SJD00095BED

Дата модификации: 29.11.2011

Размер: 249.7 Кб

4 стр.

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    BC817-40 (YJ)