2SC2188

Panasonic Industrial Europe GmbH
Transistors 2SC2188 Silicon NPN epitaxial planar type For intermediate frequency amplification of TV image Unit: mm 2.5±0.1 (1.0) (1.0) (1.5) 4.5±0.1 R 0.9 R 0.7 3.5±0.1 (1.5) ■ Absolute Maximum Ratings Ta = 25°C 4.1±0.2 2.0±0.2 2.4±0.2 1.0±0.1 d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll :// ol d d te te ow ww lo is is na n i w. win con con nce anc ng f se...
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Технические характеристики

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Корпус TO-262-3
Тип проводимости и конфигурация
Рассеиваемая мощность
Напряжение КЭ максимальное
Ток коллектора
Граничная рабочая частота
Коэффициент усиления по току
  Примечание: Small Signal Bipolar Transistor, 0.05A I(C), 35V V(BR)CEO, 1-Element, NPN, Silicon
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Transistors 2SC2188 Silicon NPN epitaxial planar type For intermediate frequency amplification of TV image Unit: mm 2.5±0.1 (1.0) (1.0) (1.5) 4.5±0.1 R 0.9 R 0.7 3.5±0.1 (1.5) ■ Absolute Maximum Ratings Ta = 25°C 4.1±0.2 2.0±0.2 2.4±0.2 1.0±0.1 d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll :// ol d d te te ow ww lo is is na n i w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P ico L d d e e ro n. ab typ ty du pa ou e pe ct d na t l life so ate cy nic st cle .co inf sta .jp orm ge /e a n/ tio . n. • High transition frequency fT • Satisfactory linearity of forward current transfer ratio hFE • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board (0.4) M Di ain sc te on na tin nc ue e/ d 6.9±0.1 ■ Features (0.85) Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 45 V Collector-emitter voltage (Base open) VCEO 35 V Emitter-base voltage (Collector open) VEBO 4 V Collector current IC 50 mA Collector power dissipation PC 600 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 3 2 (2.5) 0.45±0.05 1.25±0.05 0.55±0.1 1 (2.5) 1: Base 2: Collector 3: Emitter M-A1 Package Symbol Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 45 V VCEO IC = 1 mA, IB = 0 35 V Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 4 ICEO VCE = 20 V, IB = 0 hFE VCB = 10 V, IE = −10 mA on tin Collector-emitter voltage (Base open) ue Parameter Di sc ■ Electrical Characteristics Ta = 25°C ± 3°C Collector-emitter cutoff current (Base open) fT VCB = 10 V, IE = −10 mA, f = 100 MHz Reverse transfer capacitance (Common emitter) Cre VCB = 10 V, IE = −1 mA, f = 10.7 MHz Power gain GP VCB = 10 V, IE = −10 mA, f = 58 MHz nc VCE(sat) M ain Transition frequency Min 20 Typ 50 IC = 20 mA, IB = 2 mA Collector-emitter saturation voltage te na e/ Forward current transfer ratio Conditions 300 Max V 10 µA 100  0.5 V 500 MHz 1.5 18 Unit pF dB Pl Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: February 2003 SJC00110BED 1 PDF
Документация на 2SC2188 

2SC2188 SJC00110BED

Дата модификации: 29.11.2011

Размер: 199.8 Кб

3 стр.

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    BC817-40 (YJ)