2SC3940A

Panasonic Industrial Europe GmbH
This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SC3940, 2SC3940A Silicon NPN epitaxial planar type Unit: mm 5.0±0.2 0.7±0.1 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on...
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Технические характеристики

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Корпус TO-92-3
Тип проводимости и конфигурация
Рассеиваемая мощность
Напряжение КЭ максимальное
Ток коллектора
Граничная рабочая частота
Коэффициент усиления по току
  Примечание: Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
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Файлы 1

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This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SC3940, 2SC3940A Silicon NPN epitaxial planar type Unit: mm 5.0±0.2 0.7±0.1 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. • Low collector-emitter saturation voltage VCE(sat) • Allowing supply with the radial taping ■ Absolute Maximum Ratings Ta = 25°C 2SC3940 Collector-base voltage (Emitter open) Symbol Rating Unit VCBO 30 V 2SC3940A 60 Collector-emitter voltage 2SC3940 (Base open) 2SC3940A VCEO Emitter-base voltage (Collector open) VEBO (1.27) 25 (1.27) V 1: Emitter 2: Collector 2.54±0.15 3: Base TO-92NL-A1 Package 1 2 3 50 Collector current IC Peak collector current ICP Collector power dissipation PC Junction temperature Tj Storage temperature Tstg 0.45+0.15 –0.1 0.45+0.2 –0.1 2.3±0.2 Parameter 0.7±0.2 ■ Features 13.5±0.5 M Di ain sc te on na tin nc ue e/ d 8.0±0.2 For low-frequency output amplification and driver amplification Complementary to 2SA1534, 2SA1534A 4.0±0.2 5 V 1 A 1.5 A 1 W 150 °C −55 to +150 °C ■ Electrical Characteristics Ta = 25°C ± 3°C Symbol 2SC3940A Collector-emitter voltage (Base open) 2SC3940 2SC3940A an Emitter-base voltage (Collector open) en Collector-base cutoff current (Emitter open) int Forward current transfer ratio *1 Ma Base-emitter saturation VCEO IC = 2 mA, IB = 0 VEBO IE = 10 µA, IC = 0 ICBO VCB = 20 V, IE = 0 hFE1 *2 hFE2 Collector-emitter saturation voltage*1 voltage*1 Transition frequency Min Typ Max 30 60 25 V 50 5 VCE = 10 V, IC = 500 mA 85 VCE = 5 V, IC = 1 A 50 V 0.1 µA 340   IC = 500 mA, IB = 50 mA 0.2 0.4 VBE(sat) IC = 500 mA, IB = 50 mA 0.85 1.20 VCB = 10 V, IE = −50 mA, f = 200 MHz 200 VCB = 10 V, IE = 0, f = 1 MHz 11 Cob Unit V VCE(sat) fT Collector output capacitance (Common base, input open circuited) Conditions IC = 10 µA, IE = 0 VCBO ce /D isc on tin 2SC3940 ue Parameter Collector-base voltage (Emitter open) V V MHz 20 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Rank Q R S hFE1 85 to 170 120 to 240 170 to 340 Publication date: March 2003 SJC00150BED 1 PDF
Документация на 2SC3940A 

2SC3940, 2SC3940A SJC00150BED

Дата модификации: 30.11.2011

Размер: 249.4 Кб

4 стр.

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    BC807-25 (YJ)