2SD1266AP

Panasonic Industrial Europe GmbH
This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SD1266, 2SD1266A Silicon NPN triple diffusion planar type For power amplification Unit: mm 10.0±0.2 Rating Unit VCBO 60 V 2SD1266A Collector-emitter voltage 2SD1266 (Base open) 2SD1266A Emitter-base voltage (Collector open) 80 VCEO VEBO IC Peak collector current ICP TC = 25°C V PC 6 V 3 A 5 ...
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Технические характеристики

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Корпус TO-220-3 TO-220AB
Тип проводимости и конфигурация
Рассеиваемая мощность
Напряжение КЭ максимальное
Ток коллектора
Граничная рабочая частота
Коэффициент усиления по току
  Примечание: Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
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Файлы 1

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This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SD1266, 2SD1266A Silicon NPN triple diffusion planar type For power amplification Unit: mm 10.0±0.2 Rating Unit VCBO 60 V 2SD1266A Collector-emitter voltage 2SD1266 (Base open) 2SD1266A Emitter-base voltage (Collector open) 80 VCEO VEBO IC Peak collector current ICP TC = 25°C V PC 6 V 3 A 5 A 35 W 7.5±0.2 4.2±0.2 1.3±0.2 1.4±0.1 0.5+0.2 –0.1 0.8±0.1 2.54±0.3 80 Collector current Collector power dissipation 60 14.0±0.5 2SD1266 φ 3.1±0.1 Solder Dip (4.0) Collector-base voltage (Emitter open) Symbol 2.7±0.2 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. Parameter 16.7±0.3 ■ Absolute Maximum Ratings Ta = 25°C 4.2±0.2 5.5±0.2 M Di ain sc te on na tin nc ue e/ d • High forward current transfer ratio hFE which has satisfactory linearity • Low collector-emitter saturation voltage VCE(sat) • Full-pack package which can be installed to the heat sink with one screw 0.7±0.1 ■ Features 5.08±0.5 1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F-A1 Package 1 2 3 2.0 Junction temperature Tj Storage temperature Tstg 150 °C −55 to +150 °C ■ Electrical Characteristics Ta = 25°C ± 3°C Symbol Base-emitter voltage Collector-emitter cutoff current (E-B short) 2SD1266A 2SD1266 2SD1266 en int Ma Forward current transfer ratio Collector-emitter saturation voltage Typ Max 60 Unit V 80 VCE = 4 V, IC = 3 A 1.8 V ICES VCE = 60 V, VBE = 0 200 µA VCE = 80 V, VBE = 0 200 VCE = 30 V, IB = 0 300 VCE = 60 V, IB = 0 300 ICEO 2SD1266A Emitter-base cutoff current (Collector open) Min VBE 2SD1266A an Collector-emitter cutoff current (Base open) VCEO ce /D isc on tin Collector-emitter voltage (Base open) Conditions IC = 30 mA, IB = 0 2SD1266 ue Parameter IEBO VEB = 6 V, IC = 0 hFE1 * VCE = 4 V, IC = 1 A 70 hFE2 VCE = 4 V, IC = 3 A 10 VCE(sat) IC = 3 A, IB = 0.375 A µA 1 mA 320  1.2 V Transition frequency fT VCE = 10 V, IC = 0.5 A, f = 10 MHz 30 MHz Turn-on time ton IC = 1 A, IB1 = 0.1 A, IB2 = − 0.1 mA 0.5 µs Storage time tstg VCC = 50 V 2.5 µs 0.4 µs Fall time tf Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank Q P O hFE1 70 to 150 120 to 250 160 to 320 Publication date: April 2003 SJD00283BED 1 PDF
Документация на 2SD1266AP 

2SD1266, 2SD1266A SJD00283BED

Дата модификации: 30.11.2011

Размер: 240 Кб

3 стр.

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    BC817-40 (YJ)