2SD1275

Panasonic Industrial Europe GmbH
This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SD1275, 2SD1275A Silicon NPN triple diffusion planar type darlington Unit: mm 10.0±0.2 5.5±0.2 Collector-base voltage 2SD1275 (Emitter open) 2SD1275A VCBO VCEO Emitter-base voltage (Collector open) VEBO ICP TC = 25°C Collector power 60 V 60 4.2±0.2 V 80 IC Peak collector current Unit PC diss...
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Технические характеристики

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Корпус TO-220-3 TO-220AB
Тип проводимости и конфигурация
Рассеиваемая мощность
Напряжение КЭ максимальное
Ток коллектора
Граничная рабочая частота
Коэффициент усиления по току
  Примечание: Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
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This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SD1275, 2SD1275A Silicon NPN triple diffusion planar type darlington Unit: mm 10.0±0.2 5.5±0.2 Collector-base voltage 2SD1275 (Emitter open) 2SD1275A VCBO VCEO Emitter-base voltage (Collector open) VEBO ICP TC = 25°C Collector power 60 V 60 4.2±0.2 V 80 IC Peak collector current Unit PC dissipation 2.54±0.3 Tj Storage temperature Tstg 5.08±0.5 1: Base 2: Collector 3: Emitter EIAJ: SC-67 TO-220F-A1 Package 1 2 3 5 V 2 A 4 A 35 W Internal Connection 2.0 Junction temperature C B 150 °C −55 to +150 °C E ■ Electrical Characteristics Ta = 25°C ± 3°C Symbol 2SD1275 Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) en int Ma Forward current transfer ratio Collector-emitter saturation voltage Max 60 Unit V 80 VCE = 4 V, IC = 2 A 2.8 V VCB = 60 V, IE = 0 1 mA VCB = 80 V, IE = 0 1 ICEO VCE = 30 V, IB = 0 2 VCE = 40 V, IB = 0 2 IEBO VEB = 5 V, IC = 0 2 2SD1275A Emitter-base cutoff current (Collector open) Typ VBE 2SD1275A 2SD1275 Min ICBO an Collector-emitter cutoff current (Base open) 2SD1275 Conditions IC = 30 mA, IB = 0 VCEO ce /D isc on tin Base-emitter voltage 2SD1275A ue Parameter 0.5+0.2 –0.1 0.8±0.1 80 Collector-emitter voltage 2SD1275 (Base open) 2SD1275A Collector current Rating 14.0±0.5 Symbol di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur mi UR ue ued pe pe Pro co L a d t ty du n.p bo yp pe ct life an ut e d as lat cy on es cle ic. t in sta co fo ge .jp rm . /en at i o / n. Parameter 1.3±0.2 1.4±0.1 Solder Dip (4.0) ■ Absolute Maximum Ratings Ta = 25°C 2.7±0.2 φ 3.1±0.1 M Di ain sc te on na tin nc ue e/ d • High forward current transfer ratio hFE • High-speed switching • Full-pack package which can be installed to the heat sink with one screw 4.2±0.2 7.5±0.2 ■ Features 16.7±0.3 0.7±0.1 For power amplification Complementary to 2SB0949 and 2SB0949A hFE1 VCE = 4 V, IC = 1 A 1 000 hFE2 * VCE = 4 V, IC = 2 A 1 000 VCE(sat) IC = 2 A, IB = 8 mA mA mA  10 000 2.5 V fT VCE = 10 V, IC = 0.5 A, f = 1 MHz 20 MHz Turn-on time ton IC = 2 A, IB1 = 8 mA, IB2 = −8 mA, 0.5 µs Storage time tstg VCC = 50 V 4.0 µs 1.0 µs Transition frequency Fall time tf Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank R hFE2 1 000 to 2 500 Publication date: February 2003 Q P 2 000 to 5 000 4 000 to 10 000 SJD00189BED 1 PDF
Документация на 2SD1275 

2SD1275, 2SD1275A SJD00189BED

Дата модификации: 30.11.2011

Размер: 240.2 Кб

3 стр.

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    BC817-40 (YJ)