DZ4J039K0R

Panasonic Industrial Europe GmbH
Doc No. TT4-EA-12027 Revision. 3 Product Standards Zener Diode DZ4J039K0R DZ4J039K0R Silicon epitaxial planar type Unit: mm 2.0 For constant voltage / For surge absorption circuit 0.3  Features 4 3 1 2 1.25 2.1  Excellent rising characteristics of zener current Iz  Low zener operating resistance Rz  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 0.1...
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Технические характеристики

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Корпус 4-TSFP
Напряжение стабилизации
Ток стабилизации (макс)
Рабочая температура
Примечания Zener Diode, 3.9V V(Z), 4.99%, 0.2W, Silicon, Unidirectional
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Doc No. TT4-EA-12027 Revision. 3 Product Standards Zener Diode DZ4J039K0R DZ4J039K0R Silicon epitaxial planar type Unit: mm 2.0 For constant voltage / For surge absorption circuit 0.3  Features 4 3 1 2 1.25 2.1  Excellent rising characteristics of zener current Iz  Low zener operating resistance Rz  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 0.13 0.7  Marking Symbol:7J (0.65)(0.65) 1.3  Basic Part Number : Dual DZ2J039 (Parallel)  Packaging Embossed type (Thermo-compression sealing) 3 000 pcs / reel (standard)  Absolute Maximum Ratings Ta = 25 C Parameter Symbol Repetitive peak forward current *1 Total power dissipation *2 Electrostatic discharge Junction temperature Operating ambient temperature Storage temperature IFRM PT ESD Tj Topr Tstg Rating Unit 200 200 ±15 150 -40 to +85 -55 to +150 mA mW kV °C °C °C 1. Anode-1 2. Anode-2 3. Cathode-2 4. Cathode-1 SMini4-F3-B SC-113BB ― Panasonic JEITA Code Internal Connection 4 3 1 2 Note) *1: Mounted on glass epoxy print board. ( 45 mm x 45 mm x 1 mm) Solder in ( 0.8 mm x 0.8 mm) *2: Test method:IEC61000_4_2(C = 150 pF,R = 330 , Contact discharge:10 times)  Electrical Characteristics Ta = 25 C  3 C Parameter Symbol Forward voltage Zener voltage *1, *2 Zener operating resistance Reverse current Temperature coefficient of zener voltage *3 VF VZ RZ IR SZ Conditions IF = 10 mA IZ = 5 mA IZ = 5 mA VR = 1 V IZ = 5 mA Min Typ Max 1.0 4.10 130 10 3.71 -1.3 Unit V V  μA mV/°C Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes. 2. Absolute frequency of input and output is 5 MHz. 3. *1: The temperature must be controlled 25 °C for VZ mesurement. VZ value measured at other temperature must be adjusted to VZ (25 °C) *2: VZ guaranted 20 ms after current flow. *3: Tj = 25 °C to 150 °C Page 1 of 4 Established : 2009-12-21 Revised : 2013-10-04 PDF
Документация на DZ4J039K0R 

DZ4J039K Ver. DED

Дата модификации: 07.06.2018

Размер: 239.1 Кб

5 стр.

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