1N4746AHR1G

Taiwan Semiconductor
1N4740A - 1M200Z Taiwan Semiconductor 1W, 10V - 200V Glass Passivated Junction Silicon Zener Diode FEATURES KEY PARAMETERS ● ● ● ● ● ● Glass passivated chip junction Low profile package Built-in strain relief Low inductance Typical IR less than 5μA above 11V Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ●...
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Примечания Zener Diode, 18V V(Z), 5%, 1W, Silicon, Unidirectional, DO-204AL
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1N4740A - 1M200Z Taiwan Semiconductor 1W, 10V - 200V Glass Passivated Junction Silicon Zener Diode FEATURES KEY PARAMETERS ● ● ● ● ● ● Glass passivated chip junction Low profile package Built-in strain relief Low inductance Typical IR less than 5μA above 11V Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● ● ● ● PARAMETER VALUE UNIT VZ 10 - 200 V Test current IZT 1.2 - 25 mA Ptot 1 W TJ MAX 150 °C Package DO-204AL (DO-41) Configuration Single Die Switching mode power supply (SMPS) Adapters Lighting application On-board DC/DC converter MECHANICAL DATA ● ● ● ● Case: DO-204AL (DO-41) Molding compound meets UL 94 V-0 flammability rating Part no. with suffix "H" means AEC-Q101 qualified Packing code with suffix "G" means green compound (halogen-free) ● Terminal: Pure tin plated leads, solderable per J-STD-002 ● Meet JESD 201 class 2 whisker test ● Weight: 0.3g (approximately) DO-204AL (DO-41) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL VALUE UNIT 1.00 6.67 Watts mW/°C Power dissipation at TA=50°C Derate above 50°C (Note 1) Ptot Operating junction temperature range TJ -55 to +150 °C TSTG -55 to +150 °C Storage temperature range Note: 1. Mounted on Cu-Pad size 5mm x 5mm 1 Version:N1706 PDF
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Дата модификации: 03.06.2017

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