5.0SMDJ16AHM6G

Taiwan Semiconductor
5.0SMDJ16A - 5.0SMDJ100A Taiwan Semiconductor 5000W, 16V - 100V Surface Mount Transient Voltage Suppressor FEATURES KEY PARAMETERS ● ● ● ● ● ● ● 5000 watts peak pulse power capability at 10/1000μs waveform Ideal for automated placement Photo glass passivated junction Excellent clamping capability Fast response time: Typically less than 1.0ps Moisture sensitivity level: level 1, per J-STD-02...
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Технические характеристики

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Рассеиваемая мощность
Пиковая рассеиваемая мощность
Рабочее напряжение
Напряжение ограничения (номинальное)
Напряжение ограничения (диапазон)
Максимальное импульсное напряжение
Тип супрессора по свойствам
Количество линий ограничения
  Примечание: Trans Voltage Suppressor Diode, 5000W, 16V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB
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Аналоги 23

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Тип Наименование Корпус Упаковка i Pрасс Pрасс(пик) Uраб Uогр(ном) Uогр(диапазон) Uимп(макс) Iраб Iимп(макс) Тип Линий Cперех Примечание Карточка
товара
P= 5.0SMDJ16A (TSC)
 
—
 
 — — — — — — — — — — Trans Voltage Suppressor Diode
P- 5.0SMDJ16A/TR7 (YAG)
 
— — — 5.0SMDJ, DO-214AB, 16V, 26V, Reel 7"
P- 5.0SMDJ16A/TR13 (YAG)
 
— — — 5.0SMDJ, DO-214AB, 16V, 26V, Reel 13"
A- SMAJ16A/TR13 (YAG)
 
DO-214AC DO-214AC (SMA) — SMAJ, DO-214AC, 16V, 26V, Reel 13"
A- SMBJ16A (YJ)
 

SMBJ16A/TR7 (YAG) 		DO214AA в ленте 3000 шт
 
 — Trans Voltage Suppressor Diode, 16V V(RWM), Unidirectional
A- SM8S16AQ (YJ)
 
DO‐218AB
 
 — Trans Voltage Suppressor Diode
A- SMA6J16AQ (YJ)
 
DO214AC
 
 — Trans Voltage Suppressor Diode
A- SMCJ16AQ (YJ)
 
DO214AB
 
 — Trans Voltage Suppressor Diode
A- SMAJ16AQ (YJ)
 
DO214AC
 
 — Trans Voltage Suppressor Diode
A- SMDJ16AQ (YJ)
 
DO214AB
 
 — Trans Voltage Suppressor Diode
A- SMBJ16AQ (YJ)
 
DO214AA
 
 — Trans Voltage Suppressor Diode
A- SMF16AQ (YJ)
 
SOD123FL
 
 — Trans Voltage Suppressor Diode
A- SMAJ16A+ (MULTCMP)
 
DO-214AC DO-214AC (SMA) — — Trans Voltage Suppressor Diode, 400W, 16V V(RWM), Unidirectional, 1 Element, Silicon
A- SMAJ16A/TR7 (YAG)
 
DO-214AC DO-214AC (SMA) — SMAJ, DO-214AC, 16V, 26V, Reel 7"
A- SMCJ16A (YJ)
 

SMCJ16A (ONS-FAIR) 		DO214AB 3000 шт
 
 — Trans Voltage Suppressor Diode, 1500W, 16V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB
A- SMDJ16A-AT/TR7 (YAG)
 
DO-214AC DO-214AC (SMA) — SMDJ, DO-214AB, 16V, 26V, AUTO, Reel 7"
A- SMDJ16A/TR13 (YAG)
 
— — SMDJ, DO-214AB, 16V, 26V, Reel 13"
A- SJD12A16L01 (YAG)
 
SOD123S 15000 шт — — TVS ESD, SOD-123S, 16V, 26V, Reel
A- SMBJ16CAR5G (TSC)
 
— — — — Trans Voltage Suppressor Diode, 600W, 16V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AA
A- SMAJ16A (GWS)
 
— 160 шт
 
 — — — — — — — Trans Voltage Suppressor Diode, 16V V(RWM), Unidirectional
A- VS16VUA1LAMTFTR (ROHM)
 
DO-220AA (SMP)
 
 — — — Trans Voltage Suppressor Diode, 600W, 16V V(RWM), Unidirectional, 1 Element, Silicon
A- SMBJ16A-AT/TR13 (YAG)
 
DO-214AC DO-214AC (SMA) — SMBJ, DO-214AA, 16V, 26V, AUTO, Reel 13"
A- VS16VUA1LAMTR (ROHM)
 
DO-220AA (SMP)
 
 — — — Trans Voltage Suppressor Diode, 600W, 16V V(RWM), Unidirectional, 1 Element, Silicon

Файлы 1

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5.0SMDJ16A - 5.0SMDJ100A Taiwan Semiconductor 5000W, 16V - 100V Surface Mount Transient Voltage Suppressor FEATURES KEY PARAMETERS ● ● ● ● ● ● ● 5000 watts peak pulse power capability at 10/1000μs waveform Ideal for automated placement Photo glass passivated junction Excellent clamping capability Fast response time: Typically less than 1.0ps Moisture sensitivity level: level 1, per J-STD-020 AEC-Q101 qualified available: ordering code with suffix “H” ● Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 PARAMETER VALUE UNIT VWM VBR (uni-directional) PPPSM 16 - 100 V 17.8 - 123 V 5000 W TJ MAX 175 °C Package DO-214AB (SMC) Configuration Stacked die APPLICATIONS ● I/O interface ● AC/DC power supply ● Automotive MECHANICAL DATA ● ● ● ● ● ● Case: DO-214AB (SMC) Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 0.30 g (approximately) DO-214AB (SMC) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER Non-repetitive peak impulse power dissipation with (1) 10/1000us waveform (2) Steady state power dissipation at TL=75°C SYMBOL VALUE UNIT PPK 5000 W PD 6.25 W VF 5 V TJ -55 to +175 °C TSTG -55 to +175 °C SYMBOL TYP UNIT Junction-to-lead thermal resistance per diode RӨJL 16 °C/W Junction-to-ambient thermal resistance per diode RӨJA 61 °C/W Junction-to-case thermal resistance per diode RӨJC 17 °C/W Forward Voltage @ IF=100A for Uni-directional only (3) Junction temperature Storage temperature Notes: 1. 2. 3. Non-repetitive current pulse per Fig. 3 and derated above TA=25°C Per Fig. 1 Units mounted on PCB (16mm x 16mm Cu pad test board) Pulse test with PW=0.3 ms THERMAL PERFORMANCE PARAMETER Thermal Performance Note: Units mounted on PCB (16mm x 16mm Cu pad test board) 1 Version: C1902 PDF
Документация на 5.0SMDJ16AHM6G 

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Дата модификации: 07.03.2019

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