RSFJLR2

Taiwan Semiconductor
Диод выпрямительный одиночный , производства Taiwan Semiconductor (TSC)
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Технические характеристики

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Схема включения диодов
Примечание
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Аналоги 8

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Тип Наименование Корпус Упаковка i Сборка Uобр Iпрям Uпрям Особенности Iобр t ов Сперех T раб Монтаж Примечание Карточка
товара
P= RSFJL (TSC)
 
SUBSMA 10000 шт
 
Rectifier Diode, 1 Phase, 1 Element, 0.5A, 600V V(RRM), Silicon
P= RS1JL (TSC)
 
SUBSMA 10000 шт
 
Rectifier Diode, 1 Phase, 1 Element, 0.8A, 600V V(RRM), Silicon
P- RS1JLR2 (TSC)
 
 
Rectifier Diode, 1 Phase, 1 Element, 0.8A, Silicon
P- RSFJLRVG (TSC)
 
 
P- RS1JLRVG (TSC)
 
 
Rectifier Diode, 1 Phase, 1 Element, 0.8A, Silicon
P- RS1JLR3G (TSC)
 
 
Rectifier Diode, 1 Phase, 1 Element, 0.8A, Silicon
P- F1J (YJ)
 
SOD123FL в ленте 3000 шт
 
Rectifier Diode, 1 Phase, 1 Element, 1A, 600V V(RRM), Silicon
P- F1JF (YJ)
 
DO221AC 3000 шт
 
Rectifier Diode, 1 Phase, 1 Element, 1A, 600V V(RRM), Silicon

Файлы 1

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RSFAL thru RSFML Taiwan Semiconductor CREAT BY ART Surface Mount Fast Recovery Rectifiers FEATURES - Glass passivated junction chip - Ideal for automated placement - High temperature metallurgically bonded construction - Fast switching for high efficiency - Moisture sensitivity level: level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: Sub SMA Sub SMA Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - green compound (halogen-free) Base P/N with prefix "H" on packing code - AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test with prefix "H" on packing code meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 0.019 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER SYMBOL Marking code RSF RSF RSF RSF RSF RSF RSF AL BL DL GL JL KL ML FAL FBL FDL FGL FJL FKL FML UNIT Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V Maximum average forward rectified current IF(AV) 0.5 A Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 10 A Maximum instantaneous forward voltage (Note 1) @ 0.5 A VF 1.3 V Maximum reverse current @ rated VR TJ=25 ℃ TJ=125 ℃ IR Typical junction capacitance (Note 2) Cj Maximum reverse recovery time (Note 3) Trr Typical thermal resistance RθjC RθjA 32 150 TJ - 55 to +150 O C - 55 to +150 O C Operating junction temperature range Storage temperature range TSTG 5 μA 50 4 150 pF 250 500 ns O C/W Note 1: Pulse test with PW=300μs, 1% duty cycle Note 2: Measured at 1 MHz and Applied VR=4.0 Volts. Note 3: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A Document Number: DS_D1405033 Version: J14 PDF
Документация на RSFALR3G 

RSFAL SERIES_J14.xls

Дата модификации: 27.05.2014

Размер: 371.8 Кб

4 стр.

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